IPD082N10N3G Infineon Technologies, IPD082N10N3G Datasheet - Page 2

• Manufacturer Part Number: IPD082N10N3G
• Description: Power-Transistor
• Manufacturer: Infineon Technologies

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Rev. 2.5
3)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm
V
V
V
T
V
T
V
V
TO 220, TO 262
V
TO263
V
TO 252
V
220, TO 262
V
263
V
252
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
GS
GS
=25 °C
=125 °C
=80 A
DS
=V
=100 V, V
=100 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
=10 V, I
=6 V, I
=6 V, I
=6 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
D
D
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
=36 A, TO
=36 A, TO
=36 A, TO
D
D
D
=75 µA
DS(on)max
DS
=73 A,
=73 A,
=73 A,
GS
GS
=0 V
=0 V,
=0 V,
3)
IPP086N10N3 G
IPB083N10N3 G
,
min.
100
45
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
2.7
0.1
7.4
7.2
9.3
9.0
8.9
10
89
1
7
1
-
-
-
-
IPD082N10N3 G
IPI086N10N3 G
max.
15.4
15.1
100
100
1.2
3.5
8.6
8.3
8.2
62
50
15
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2010-07-16
Datasheet pdf - http://www.DataSheet4U.net/