ATP104 Sanyo Semicon Device, ATP104 Datasheet
ATP104
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ATP104 Summary of contents
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... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP104 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
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... --10V --38A =0.39Ω D PW=10μs D.C.≤1% G ATP104 P.G 50Ω S ATP104 Symbol Conditions -10V =--1mA V GS (off -10V =--38A | yfs | -38A -10V R DS (on -19A -4. (on)2 Ciss V DS =--10V, f=1MHz Coss V DS =--10V, f=1MHz ...
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... Drain Current Time -- --15V --10V 1000 100 (on --0.1 --1.0 --10 Drain Current ATP104 --100 Tc=25 ° --10V --90 --80 --70 -- --3.5V --50 --40 --30 --20 -- --1.5 --2.0 0 --0.5 IT14388 18 Tc=25 ° C Single pulse ...
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... Case Temperature °C Note on usage : Since the ATP104 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...