HMPS651 Hi-Sincerity Mocroelectronics, HMPS651 Datasheet

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HMPS651

Manufacturer Part Number
HMPS651
Description
NPN SILIOCN TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
HMPS651
NPN SILICON TRANSISTOR
Description
Amplifier transistor
Absolute Maximum Ratings
Characteristics
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW
VCBO Collector to Base Voltage ........................................................................................ 80 V
VCEO Collector to Emitter Voltage ..................................................................................... 60 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current .............................................................................................................. 2 A
*VCE(sat)1
*VCE(sat)2
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
*VBE(sat)
VBE(on)
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
*hFE3
*hFE4
ICBO
IEBO
fT
Min.
80
60
75
75
75
40
75
5
-
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
0.1
0.1
0.5
0.3
1.2
1
-
-
-
-
-
-
-
-
MHz
Unit
uA
uA
V
V
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=10mA, IB=0
IC=100uA, IE=0
IE=10uA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
IC=2A, IB=200mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=1A, VCE=2V
IC=50mA, VCE=2V
IC=500mA, VCE=2V
IC=1A, VCE=2V
IC=2A, VCE=2V
IC=50mA, VCE=5V, f=100MHz
Test Conditions
Spec. No. : HE6326-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 1/4
HSMC Product Specification

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HMPS651 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HMPS651 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage ........................................................................................ 80 V VCEO Collector to Emitter Voltage ..................................................................................... 60 V VEBO Emitter to Base Voltage ...

Page 2

HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 100 10 0 Collector Current (mA) On Voltage & Collector Current 10000 1000 BE(on) 100 10 100 Collector Current (mA) Capacitance & Reverse-Biased Voltage ...

Page 3

HI-SINCERITY MICROELECTRONICS CORP. PD-Ta 700 600 500 400 300 200 100 100 Ambient Temperature-Ta( 120 140 160 o C) Spec. No. : HE6326-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : ...

Page 4

HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension Inches DIM Min. Max. A 0.1704 0.1902 B 0.1704 0.1902 C 0.5000 - D 0.0142 0.0220 E - *0.0500 F 0.1323 0.1480 Notes : ...

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