MT28F004B5 Micron, MT28F004B5 Datasheet

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MT28F004B5

Manufacturer Part Number
MT28F004B5
Description
FLASH MEMORY
Manufacturer
Micron
Datasheet

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FLASH MEMORY
FEATURES
• Seven erase blocks:
• Smart 5 technology (B5):
• Address access times: 60ns, 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
• Byte-wide READ and WRITE only
• TSOP and SOP packaging options
OPTIONS
• Timing
• Configurations
• Boot Block Starting Word Address
• Operating Temperature Range
• Packages
4Mb Smart 5 Boot Block Flash Memory
F44_B.p65 – Rev. 7/02
60ns access
80ns access
80ns access
512K x 8
256K x 16/512K x 8
Top (3FFFFH)
Bottom (00000H)
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
Plastic 44-pin SOP (600 mil)
Plastic 48-pin TSOP Type 1
Plastic 40-pin TSOP
(12mm x 20mm)
(10mm x 20mm)
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
5V ±10% V
5V ±10% V
12V ±5% V
(MT28F400B5, 256K x 16/512K x 8)
(MT28F004B5, 512K x 8)
programming
programming
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
MT28F400B5SG-8 T
CC
PP
PP
Part Number Example:
application/production
compatibility production
MARKING
MT28F004B5
MT28F400B5
None
-8 ET
WG
VG
SG
ET
-6
-8
T
B
SMART 5 BOOT BLOCK FLASH MEMORY
1
MT28F004B5
MT28F400B5
5V Only, Dual Supply (Smart 5)
0.3µm Process Technology
GENERAL DESCRIPTION
are nonvolatile, electrically block-erasable (flash), pro-
grammable, read-only memories containing 4,194,304
bits organized as 262,144 words (16 bits) or 524,288
bytes (8 bits). Writing or erasing the device is done with
a 5V V
with a 5V V
V
ming. For backward compatibility with SmartVoltage
technology, 12V V
cycles and may be connected for up to 100 cumulative
hours. These devices are fabricated with Micron’s ad-
vanced CMOS floating-gate process.
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal
write or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
flash/htmls/datasheets.html)p for the latest data sheet.
40-Pin TSOP Type I 48-Pin TSOP Type I
PP
The MT28F004B5 (x8) and MT28F400B5 (x16, x8)
The MT28F004B5 and MT28F400B5 are organized
Please refer to Micron’s Web site (www.micron.com/
is optimal for application and production program-
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PP
voltage, while all operations are performed
CC
. Due to process technology advances, 5V
PP
44-Pin SOP
is supported for a maximum of 100
©2002, Micron Technology, Inc.
4Mb

Related parts for MT28F004B5

MT28F004B5 Summary of contents

Page 1

... MT28F400B5 5V Only, Dual Supply (Smart 5) 0.3µm Process Technology 40-Pin TSOP Type I 48-Pin TSOP Type I GENERAL DESCRIPTION The MT28F004B5 (x8) and MT28F400B5 (x16, x8) are nonvolatile, electrically block-erasable (flash), pro- MARKING grammable, read-only memories containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with ...

Page 2

... WE WP# 12 A18 ORDER NUMBER AND PART MARKING MT28F004B5VG-6 B MT28F004B5VG-6 T MT28F004B5VG-8 B MT28F004B5VG-8 T MT28F004B5VG-8 BET MT28F004B5VG-8 TET 2 44-Pin SOP WP A17 ...

Page 3

... WP# CE# Command OE# Execution WE# Logic RP NOTE: 1. Does not apply to MT28F004B5. 4Mb Smart 5 Boot Block Flash Memory F44_B.p65 – Rev. 7/02 SMART 5 BOOT BLOCK FLASH MEMORY FUNCTIONAL BLOCK DIAGRAM 16KB Boot Block 8KB Parameter Block 18 (19) 9 8KB Parameter Block 96KB Main Block 9 ...

Page 4

... Supply Power Supply: +5V ±10 Supply Ground – No Connect: These pins may be driven or left unconnected. is supported for a maximum of 100 cycles and may PP Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 DESCRIPTION 1 (12V) and RP during a WRITE or 2 PPH IH ...

Page 5

... 70H 70H High 71H 71H High-Z ID Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb High-Z High High Data- Data-In ...

Page 6

... TRUTH TABLE (MT28F004B5) FUNCTION Standby RESET READ READ Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE 5 READ ARRAY WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM 3, 6 ERASE CONFIRM WRITE SETUP 4 WRITE 4, 6 WRITE 5 READ ARRAY 8, 9 DEVICE IDENTIFICATION ...

Page 7

... WP# pin is brought HIGH. This provides additional security for the core firmware during in-system firm- ware updates should an unintentional power fluctua- tion or system reset occur. The MT28F004B5 and MT28F400B5 are available with the boot block starting at the bottom of the address space (“B” suffix) or the top of the address space (“ ...

Page 8

... See the Command Execution section for more detail. DEEP POWER-DOWN MODE To allow for maximum power conservation, the MT28F004B5 and MT28F400B5 feature a very low cur- rent, deep power-down mode. To enter this mode, the RP# pin is taken to V ±0.2V. In this mode, the current SS draw is a maximum of 20µ ...

Page 9

... The MT28F004B5 and MT28F400B5 are available in two configurations and top or bottom boot block. The top boot block version supports processors of the x86 variety. The bottom boot block version is intended for 680X0 and RISC applications. Figure 1 illustrates the memory address maps associated with these two ver- sions ...

Page 10

... When the device is in this mode, only READ STATUS REGISTER, READ ARRAY and ERASE RESUME commands may be executed Writing to the boot block also PPH 1 PPH 2 or WP# be HIGH. A0- HH Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb must be PP ©2002, Micron Technology, Inc. ...

Page 11

... COMMAND SET To simplify writing of the memory blocks, the MT28F004B5 and MT28F400B5 incorporate an ISM that controls all internal algorithms for the WRITE and ERASE cycles. An 8-bit command set is used to control the device. Details on how to sequence commands are provided in the Command Execution section. Table 1 lists the valid commands ...

Page 12

... WRITE X 2 WRITE X 2 WRITE X 2 WRITE X Micron Technology, Inc., reserves the right to change products or specifications without notice Writing to the boot block also requires that the or that the WP# pin brought until the WRITE is completed PPH 2ND CYCLE FFH 90H ...

Page 13

... Status Register Error Decode voltage error voltage not valid at time of WRITE PP voltage not valid at time of ERASE CONFIRM PP voltage error, with WRITE and ERASE errors Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb or the WP set PPH PP status bit PP © ...

Page 14

... WRITE and ERASE cycles that can be performed on the device. POWER USAGE The MT28F004B5 and MT28F400B5 offer several power-saving features that may be utilized in the array read mode to conserve power. Deep power-down mode is enabled by bringing RP# LOW. Current draw (I this mode is a maximum of 20µ ...

Page 15

... Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER. 4Mb Smart 5 Boot Block Flash Memory F44_B.p65 – Rev. 7/02 SMART 5 BOOT BLOCK FLASH MEMORY COMPLETE WRITE STATUS-CHECK 1 Start (WRITE completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 SEQUENCE SR3 = 0? V Error PP YES ...

Page 16

... COMPLETE BLOCK ERASE STATUS-CHECK SEQUENCE NO SR3 = 0? V Error PP YES YES SR4 Command Sequence Error NO NO SR5 = 0? BLOCK ERASE Error YES ERASE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb ©2002, Micron Technology, Inc. ...

Page 17

... SUSPEND STATUS REGISTER READ NO SR7 = 1? YES NO SR6 = 1? YES WRITE FFh (READ ARRAY) Done NO Reading? YES WRITE D0h (ERASE RESUME) Resume ERASE 17 ERASE Completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb ©2002, Micron Technology, Inc. ...

Page 18

... 0.4 – – 500 ID I – 500 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb NOTES UNITS NOTES µA µA µA µA ©2002, Micron Technology, Inc. ...

Page 19

... SUPPLY (RP ±0.2V ≤ 5.5V) SUPPLY ( SUPPLY (RP ±0.2V Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 SYMBOL MAX UNITS NOTES ≤ +85°C) A SYMBOL MAX UNITS NOTES ...

Page 20

... Smart 5 Boot Block Flash Memory F44_B.p65 – Rev. 7/02 SMART 5 BOOT BLOCK FLASH MEMORY ≤ +70°C) and Extended Temperature (-40°C ≤ AOE after CE# falls before Micron Technology, Inc., reserves the right to change products or specifications without notice. 20 ≤ +85°C +5V ±10 -8/-8 ET ...

Page 21

... ±5 VALID DATA -6 MIN MAX MIN 60 3 500 4 500 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb = 50pF DON’T CARE UNDEFINED -8/-8 ET MAX UNITS – ns 500 ns – – ...

Page 22

... ±5 VALID DATA -6 MIN MAX MIN 60 3 500 4 500 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb DON’T CARE UNDEFINED -8/-8 ET MAX UNITS – ns 500 ns – – – ...

Page 23

... For SmartVoltage-compatible production programming, 12V V be connected for up to 100 cummulative hours. 5. Applies to MT28F400B5 only. 6. Applies to MT28F004B5 and MT28F400B5 with BYTE = LOW. 7. Parameter is specified when device is not accessed. Actual current draw will be I READ is executed while the device is in erase suspend mode. ...

Page 24

... SMART 5 BOOT BLOCK FLASH MEMORY ≤ +70°C) and Extended Temperature (-40°C ≤ SYMBOL WPH t CPH Micron Technology, Inc., reserves the right to change products or specifications without notice. 24 ≤ +85°C +5V ±10 -8/-8 ET MIN MAX MIN MAX UNITS NOTES 70 ...

Page 25

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb = +5V ±10% or NOTES ©2002, Micron Technology, Inc. ...

Page 26

... TYP MAX UNITS NOTES 0 – 1 – Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb = +5V ±10% or NOTES ©2002, Micron Technology, Inc. ...

Page 27

... MIN MAX 0 200 500 100 6 300 300 600 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb CMD in DON’T CARE -8/-8 ET MIN MAX UNITS 0 ns 200 ns 500 ns 100 ns 6 µ ...

Page 28

... MIN MAX 0 200 500 100 6 300 300 600 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb CMD in DON’T CARE -8/-8 ET MIN MAX UNITS 0 ns 200 ns 500 ns 100 ns 6 µ ...

Page 29

... MAX GAGE PLANE .010 (0.25) .0315 (0.80) MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 4Mb SEE DETAIL A .016 (0.40) .010 (0.25) DETAIL A (ROTATED 90 CW) .066 (1.72) ©2002, Micron Technology, Inc. ...

Page 30

... SEE DETAIL A MIN 30 .010 (0.25) .397 (10.08) .391 (9.93) .004 (0.10) MAX .008 (0.20) .002 (0.05) DETAIL A .0315 (0.80) Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb .010 (0.25) GAGE PLANE .024 (0.60) .016 (0.40) ©2002, Micron Technology, Inc. ...

Page 31

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron and the M logo are registered trademarks and the Micron logo is a trademark of Micron Technology, Inc. 4Mb Smart 5 Boot Block Flash Memory F44_B.p65 – Rev. 7/02 ...

Page 32

... REVISION HISTORY Rev. B ......................................................................................................................................................................... 7/02 • Added process technology information to page 1 4Mb Smart 5 Boot Block Flash Memory F44_B.p65 – Rev. 7/02 SMART 5 BOOT BLOCK FLASH MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice. 32 4Mb ©2002, Micron Technology, Inc. ...

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