BFY450H Infineon Technologies AG, BFY450H Datasheet
BFY450H
Related parts for BFY450H
BFY450H Summary of contents
Page 1
HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P =19dBm 1.8 GHz -1dB Max. Available Gain G = 16dB at 1.8 GHz ma Hermetically sealed microwave package Transition Frequency ...
Page 2
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 1 110°C S Junction temperature Operating temperature range Storage temperature range Thermal Resistance 2) Junction-soldering point Notes ...
Page 3
Electrical Characteristics (continued) Parameter AC Characteristics Transition frequency I = 90mA 1.0 GHz 90mA 2.0 GHz C CE Collector-base capacitance ...
Page 4
Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: Q.......... BFY450 (ql) Ordering Example: Ordering Code: ...
Page 5
... Semiconductor Group Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes implemented within components or assemblies. ...