BFY450H Infineon Technologies AG, BFY450H Datasheet - Page 3

no-image

BFY450H

Manufacturer Part Number
BFY450H
Description
HiRel NPN Silicon RF Transistor
Manufacturer
Infineon Technologies AG
Datasheet
Electrical Characteristics (continued)
Notes.:
1)
Semiconductor Group
Parameter
AC Characteristics
Transition frequency
I
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise Figure
I
Z
Insertion power gain
I
Z
Power gain
I
Z
1dB Compression point
I
Z
C
C
C
C
C
C
S
S
S
S
CB
CE
EB
= 50 mA, V
= 50 mA, V
= 50 mA, V
= 90mA, V
= 90mA, V
= 10 mA, V
= Z
= Z
= Z
= Z
G
= 0.5V, V
= 2 V, V
= 2 V, V
ma
L
Sopt
Sopt
sopt
= 50
, Z
, Z
S
S
12
21
BE
BE
L
L
CE
CE
CE
CE
CE
CB
= Z
= Z
CE
(
= vbe = 0, f = 1 MHz
= vbe = 0, f = 1 MHz
= 3 V, f = 1.0 GHz
= 3 V, f = 2.0 GHz
k
= 2 V, f = 1.8 GHz
= 2 V, f = 1.8 GHz
= 2 V, f = 1.8 GHz
= vcb = 0, f = 1 MHz
= 2 V, f = 1.8 GHz,
Lopt
Lopt
k
2
1
)
,
G
ms
S
S
12
21
Symbol
f
C
C
C
F
|S
Gma
P
T
-1dB
CB
CE
EB
21e
3 of 5
|
2
1.)
min.
18
-
-
-
-
-
8.0
-
-
Values
typ.
22
17
0.42
1.27
2.0
1.25
12
16.0
19
max.
-
-
0.9
2.6
3
2.0
-
-
-
Draft B, September 99
BFY450
Unit
GHz
pF
pF
pF
dB
dB
dB
dBm

Related parts for BFY450H