ipd20n03lg Infineon Technologies Corporation, ipd20n03lg Datasheet

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ipd20n03lg

Manufacturer Part Number
ipd20n03lg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD20N03LG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
OptiMOS
Feature
Type
IPD20N03L
IPU20N03L
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
Superior thermal resistance
N-Channel
175°C operating temperature
Ideal for fast switching buck converters
Logic Level
Low On-Resistance R
Excellent Gate Charge x R
Avalanche rated
dv/dt rated
=15A, V
=30A, V
=25°C
=25°C
=25°C
DS
DD
=24V, di/dt=200A/µs, T
=25V, R
Buck converter series
GS
=25
DS(on)
1)
j
= 25 °C, unless otherwise specified
Package
P- TO252 -3-11
P- TO251 -3-1
DS(on)
jmax
=175°C
product (FOM)
jmax
2)
Ordering Code
Q67042-S4050
Q67042-S4106
Page 1
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
j ,
AS
AR
GS
tot
T
stg
P- TO251 -3-1
Marking
20N03L
20N03L
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
DS(on)
±20
120
30
30
15
60
6
6
P- TO252 -3-11
IPD20N03L
IPU20N03L
06-09-2005
30
20
30
Unit
A
mJ
kV/µs
V
W
°C
V
m
A

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ipd20n03lg Summary of contents

Page 1

OptiMOS Buck converter series Feature N-Channel Logic Level Low On-Resistance R DS(on) Excellent Gate Charge x R DS(on) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching buck converters Type Package IPD20N03L P- TO252 -3-11 ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output ...

Page 4

Power dissipation tot C IPD20N03L 100 120 140 160 3 Safe operating area I = ...

Page 5

Typ. output characteristic =25° parameter µs p IPD20N03L 60W tot ...

Page 6

Drain-source on-state resistance DS(on) j parameter : IPD20N03L 98% 20 typ -60 -20 20 ...

Page 7

Typ. avalanche energy par 105 14 Typ. ...

Page 8

TO-252-3-1 Package outline Page 8 IPD20N03L IPU20N03L 06-09-2005 ...

Page 9

PG-TO-251-3 Page 9 IPD20N03L IPU20N03L 06-09-2005 ...

Page 10

Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...

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