ipd50n06s3l-06 Infineon Technologies Corporation, ipd50n06s3l-06 Datasheet
ipd50n06s3l-06
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ipd50n06s3l-06 Summary of contents
Page 1
... GS T =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPD50N06S3L-06 DS DS(on),max D PG-TO252-3-11 Value = 200 710 50 ±16 136 -55 ... +175 55/175/ 6 Unit °C 2007-11-07 ...
Page 2
... = DSS T =25 ° = =125 ° = GSS =37 A DS( page 2 IPD50N06S3L-06 Values min. typ. max 1 1.2 1 100 = 100 - 8 5.1 Unit K/W - ...
Page 3
... V =27 /dt =100 A/µ 1.1 K/W the chip is able to carry 112 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD50N06S3L-06 Values min. typ. max. - 9400 11750 pF = 1200 1800 - 1130 1700 - 20 - ...
Page 4
... 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPD50N06S3L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] ...
Page 5
... [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 10 -55 °C 25 °C 175 ° -60 [V] page 5 IPD50N06S3L- ° 100 150 100 T [° ...
Page 6
... Coss 10 800µA Crss 100 140 180 12 Typ. avalanche characteristics I = f(t AV parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPD50N06S3L- MHz [ j(start) 100°C 150° 100 t [µ 25°C 1000 2007-11-07 ...
Page 7
... Q gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 150 200 16 Gate charge waveforms s(th (th) 150 200 [nC] page 7 IPD50N06S3L- -60 - 100 T [° plateau 140 180 Q gate 2007-11-07 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 IPD50N06S3L-06 2007-11-07 ...
Page 9
... Revision History Version Data Sheet version 1.1 Data Sheet version 1.1 Data Sheet version 1.1 Data Sheet version 1.1 Rev. 1.1 Date 07.11.2007 07.11.2007 07.11.2007 07.11.2007 page 9 IPD50N06S3L-06 Changes Implementation of avalanche current single pulse Update of package drawing Update of avalanche diagram 12 and 13 implementation of footnote 2 for Eas specification 2007-11-07 ...