ipd096n08n3g Infineon Technologies Corporation, ipd096n08n3g Datasheet

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ipd096n08n3g

Manufacturer Part Number

ipd096n08n3g

Description

Optimos Tm 3 Power Transistor Power Mosfet

Manufacturer

Infineon Technologies Corporation

Datasheet

1.IPD096N08N3G.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IPD096N08N3G

Manufacturer:

INFINEON

Quantity:

12 500

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IPD096N08N3G

0

Company:

H&T Electronics

H&T Electronics

Part Number:

IPD096N08N3G

Quantity:

4 800

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

ipd096n08n3gATMA1

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

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Rev. 2.1

1)

2)

3)

Features

• Ideal for high frequency switching

• Optimized technology for DC/DC converters

• Excellent gate charge x R

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

OptiMOS

Type

Package

Marking

J-STD20 and JESD22

See figure 3 for more detailed information

See figure 13 for more detailed information

(TM)

3 Power-Transistor

IPD096N08N3 G

PG-TO252-3

096N08N

2)

j

=25 °C, unless otherwise specified

DS(on)

1)

3)

product (FOM)

for target applications

Symbol Conditions

I

I

E

V

P

T

D

D,pulse

j

AS

GS

tot

, T

stg

T

T

T

I

T

D

page 1

C

C

C

C

=46 A, R

=25 °C

=100 °C

=25 °C

=25 °C

2)

GS

=25 Ω

Product Summary

V

R

I

D

DS

DS(on),max

-55 ... 175

55/175/56

Value

292

±20

100

73

52

90

IPD096N08N3 G

9.6

80

73

Unit

A

mJ

V

W

°C

V

mΩ

A

2008-10-20

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