ipd042p03l3g Infineon Technologies Corporation, ipd042p03l3g Datasheet
ipd042p03l3g
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ipd042p03l3g Summary of contents
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OptiMOS TM P3 Power-Transistor Features • single P-Channel (Logic Level) • Enhancement mode • Qualified according JEDEC • 175 °C operating temperature • Pb-free; RoHS compliant • applications: load switch, HS-switch Type Package IPD042P03L3 G PG-TO252-3 Maximum ratings ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 2) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f ≤10 s tot C p 160 150 140 130 120 110 100 Safe operating area 1) I =f(V ...
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Typ. output characteristics I =f =25 ° parameter -10 V -3 Typ. transfer characteristics I =f(V ); ...
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Drain-source on-state resistance DS(on -60 - Typ. capacitances C =f MHz DS ...
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Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage =-250 µ BR(DSS ...
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Package Outline PG-TO252-3 Dimensions in mm Rev. 1.0 Preliminary Datasheet page 8 IPD042P03L3 G 2008-11-12 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...