ipd068p03l3g Infineon Technologies Corporation, ipd068p03l3g Datasheet
ipd068p03l3g
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ipd068p03l3g Summary of contents
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OptiMOS TM P3 Power-Transistor Features • single P-Channel in DPAK • Qualified according JEDEC • 175 °C operating temperature • 100% Avalanche tested • Pb-free; RoHS compliant, halogen free • applications: power management Type Package IPD068P03L3 G PG-TO252-3 Maximum ratings, ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 2) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 110 100 Safe operating area =25 ° ...
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Typ. output characteristics I =f =25 ° parameter - Typ. transfer characteristics I =f |>2|I ...
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Drain-source on-state resistance DS(on -60 - Typ. capacitances C =f MHz DS ...
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Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage =-250 µ BR(DSS ...
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Package Outline PG-TO252-3 Dimensions in mm Rev. 2.0 page 8 IPD068P03L3 G 2009-05-27 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...