ipd06n03lbg Infineon Technologies Corporation, ipd06n03lbg Datasheet - Page 6

• Manufacturer Part Number: ipd06n03lbg
• Description: Optimos 2 Power-transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 0.4
9 Drain-source on-state resistance
R
11 Typ. Capacitances
C =f(V
DS(on)
10000
1000
100
12
11
10
10
DS
=f(T
9
8
7
6
5
4
3
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=50 A; V
5
20
10
GS
98 %
V
=10 V
T
Coss
Ciss
DS
j
Crss
60
15
[°C]
[V]
typ
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
IPU06N03LB
D
j
GS
-20
=V
0.5
175 °C
DS
20
40 µA
V
T
SD
j
1.0
60
[°C]
25°C 98%
[V]
400 µA
25 °C
100
IPS06N03LB
1.5
140
175°C 98%
2008-04-23
180
2.0