ipd038n06n3g Infineon Technologies Corporation, ipd038n06n3g Datasheet
ipd038n06n3g
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ipd038n06n3g Summary of contents
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Type OptiMOS ® 3 Power-Transistor Features • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • N-channel, normal level • for sync. rectification, drives and dc/dc SMPS • Avalanche rated • Very low on-resistance R DS(on) ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 200 180 160 140 120 100 Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 200 160 120 Typ. transfer characteristics I =f(V ); ...
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Drain-source on-state resistance =10 V DS(on max -60 - Typ. capacitances C =f MHz DS ...
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Avalanche characteristics parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS -60 -20 ...
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PG-TO252-3 (D-Pak) Rev.1.01 page 8 IPD038N06N3 G 2008-02-14 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...