ipd122n10n3g Infineon Technologies Corporation, ipd122n10n3g Datasheet
ipd122n10n3g
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ipd122n10n3g Summary of contents
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OptiMOS TM 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation =f tot C 100 Safe operating area =f =25 ° parameter limited by on-state ...
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Typ. output characteristics =f =25 ° parameter 200 180 10 V 160 7.5 V 140 120 100 4 ...
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Drain-source on-state resistance = DS(on -60 - Typ. ...
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Avalanche characteristics =25 Ω =f parameter: T j(start) 100 10 150 ° Drain-source breakdown voltage =f BR(DSS 110 105 100 95 ...
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PG-TO-252 (D-Pak) Rev. 2.2 page 8 IPD122N10N3 G 2009-07-09 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...