psmn005-75p NXP Semiconductors, psmn005-75p Datasheet
psmn005-75p
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psmn005-75p Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN005-75P in SOT78 (TO-220AB) PSMN005-75B in SOT404 (D 2. Features Low on-state resistance Fast switching. 3. Applications High frequency computer motherboard converters OR-ing applications ...
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... peak source (diode forward) current T SM Avalanche ruggedness E non-repetitive avalanche energy DS(AL)S I non-repetitive avalanche current DS(AL)S 9397 750 09743 Product data PSMN005-75P/75B N-channel enhancement mode field-effect transistor Conditions 175 ...
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... der Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 26 April 2002 PSMN005-75P/75B 03ah89 120 150 T mb (º ------------------- 100 03ah91 (V) © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 09743 Product data N-channel enhancement mode field-effect transistor Conditions Figure 4 vertical in still air mounted on a printed circuit board; minimum footprint Rev. 01 — 26 April 2002 PSMN005-75P/75B Min Typ Max Unit - - 0.65 K 03af48 t p ...
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... Source-drain diode V source-drain (diode forward) voltage I SD 9397 750 09743 Product data PSMN005-75P/75B N-channel enhancement mode field-effect transistor Conditions I = 0. ...
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... V 0 300 - ( ---------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 26 April 2002 PSMN005-75P/75B 03ah94 V DS > DSon 175 ºC 25 º (V) > DSon 03aj03 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF Rev. 01 — 26 April 2002 PSMN005-75P/75B 03aa35 min typ max ( 03ah97 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 26 April 2002 PSMN005-75P/75B 03ah98 ºC 50 100 150 200 Q G (nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... 0.7 15.8 6.4 10.3 15.0 2.54 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC EIAJ 3-lead TO-220AB SC-46 Rev. 01 — 26 April 2002 PSMN005-75P/75B base ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 00-09-07 01-02-16 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. SOT78 ...
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... N-channel enhancement mode field-effect transistor 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC EIAJ Rev. 01 — 26 April 2002 PSMN005-75P/75B 2 -PAK); 3 leads mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 99-06-25 01-02-12 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. SOT404 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020426 - Product data; initial version 9397 750 09743 Product data PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 26 April 2002 Rev. 01 — 26 April 2002 PSMN005-75P/75B PSMN005-75P/75B Fax: + 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 April 2002 Document order number: 9397 750 09743 PSMN005-75P/75B N-channel enhancement mode field-effect transistor ...