PSMN005-75B NXP Semiconductors, PSMN005-75B Datasheet
PSMN005-75B
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PSMN005-75B Summary of contents
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... PSMN005-75B N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 — 16 November 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... PSMN005-75B_1 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Simplified outline mb [ SOT404 (D2PAK) Rev. 01 — 16 November 2009 PSMN005-75B Graphic symbol mbb076 Version SOT404 © NXP B.V. 2009. All rights reserved ...
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... sup °C; unclamped j(init) 03ah89 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 01 — 16 November 2009 PSMN005-75B Min Max - - and Figure 3 - 400 - 230 -55 175 -55 175 -30 ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN005-75B_1 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 — 16 November 2009 PSMN005-75B 03ah91 10 μ 100 μ 0 (V) DS © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN005-75B_1 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint −5 −4 −3 − Rev. 01 — 16 November 2009 PSMN005-75B Min Typ Max - - 0. 03af48 t p δ ...
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... MHz °C; see Figure 1.25 Ω Ω °C G(ext ° see Figure 13 Rev. 01 — 16 November 2009 PSMN005-75B Min Typ Max Unit 4 0.02 1 µA ...
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... Output characteristics: drain current as a function of drain-source voltage; typical values 03ah94 5 V GS(th) ( ° − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 01 — 16 November 2009 PSMN005-75B 03ah92 7 6 7.5 5.5 4.5 0.5 1 1.5 V (V) DS 03aa32 max typ min ...
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... Q (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 01 — 16 November 2009 PSMN005-75B 03aj03 0 60 120 T (°C) j 03ah97 (V) DS © NXP B.V. 2009. All rights reserved. 180 ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PSMN005-75B_1 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 ( 175 ° ° 0.0 0.5 1.0 Rev. 01 — 16 November 2009 PSMN005-75B 03ah96 1.5 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... N-channel TrenchMOS SiliconMAX standard level FET 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 01 — 16 November 2009 PSMN005-75B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...
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... Revision history Table 7. Revision history Document ID Release date PSMN005-75B_1 20091116 PSMN005-75B_1 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Data sheet status Change notice Product data sheet - Rev. 01 — 16 November 2009 PSMN005-75B Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 16 November 2009 PSMN005-75B © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 November 2009 Document identifier: PSMN005-75B_1 ...