PSMN005-75B NXP Semiconductors, PSMN005-75B Datasheet - Page 5

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN005-75B

Manufacturer Part Number
PSMN005-75B
Description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN005-75B_1
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
0.02
δ = 0.5
0.2
0.1
0.05
single pulse
10
−5
10
Conditions
see
mounted on a printed-circuit
board; minimum footprint
−4
Rev. 01 — 16 November 2009
Figure 4
10
−3
N-channel TrenchMOS SiliconMAX standard level FET
10
−2
10
−1
P
t
p
1
T
Min
-
-
PSMN005-75B
t
δ =
p
(s)
03af48
T
t
t
p
10
Typ
-
50
© NXP B.V. 2009. All rights reserved.
Max
0.65
-
Unit
K/W
K/W
5 of 13

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