PSMN005-75B NXP Semiconductors, PSMN005-75B Datasheet - Page 6

• Manufacturer Part Number: PSMN005-75B
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
PSMN005-75B_1
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
I
see
D
D
D
D
D
D
S
j
j
DS
DS
GS
GS
GS
GS
DS
DS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 75 A; V
= 25 °C; see
= 25 °C; see
= 25 A; V
Figure 8
Figure 8
Figure 8
Figure 9
Figure 9
Figure 13
= 75 V; V
= 75 V; V
= 25 V; V
= 15 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 6 Ω; T
Rev. 01 — 16 November 2009
GS
DS
DS
DS
DS
D
D
and
and
GS
GS
GS
DS
L
DS
= 25 A; T
= 25 A; T
= 60 V; V
= 0 V; T
j
= V
= V
= V
Figure 11
Figure 12
= 1.25 Ω; V
GS
GS
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
10
10
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
N-channel TrenchMOS SiliconMAX standard level FET
j
= 25 °C;
j
j
j
j
j
GS
j
j
j
= 175 °C;
= 25 °C;
= -55 °C;
= 175 °C;
= 25 °C;
j
= 25 °C
= 175 °C
= 25 °C
= 25 °C
j
j
GS
= 10 V;
= -55 °C
= 25 °C
= 10 V;
Min
67
75
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PSMN005-75B
Typ
-
-
-
3
-
0.02
-
10
10
9.25
4.3
165
32
50
8250
920
470
37
73
144
74
0.8
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
4
4.4
1
500
100
100
10.75
5
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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