mrf9060l

Manufacturer Part Numbermrf9060l
DescriptionRf Power Field Effect Transistors
ManufacturerFreescale Semiconductor, Inc
mrf9060l datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applica-
tions in 26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
Efficiency — 40%
IMD — - 31 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Document Number: MRF9060
MRF9060LR1
MRF9060LSR1
945 MHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
CASE 360C - 05, STYLE 1
Symbol
V
DSS
V
GS
MRF9060LR1
P
D
MRF9060LSR1
T
stg
T
C
T
J
Symbol
MRF9060LR1
R
θJC
MRF9060LSR1
M1 (Minimum)
MRF9060LR1 MRF9060LSR1
Rev. 9, 5/2006
BROADBAND
NI - 360
MRF9060LR1
NI - 360S
MRF9060LSR1
Value
Unit
- 0.5, +65
Vdc
- 0.5, + 15
Vdc
159
W
0.91
W/°C
219
W
1.25
W/°C
- 65 to +150
°C
150
°C
200
°C
(1)
Value
Unit
1.1
°C/W
0.8
Class
1 (Minimum)
1

mrf9060l Summary of contents

  • Page 1

    ... CASE 360B - 05, STYLE 1 CASE 360C - 05, STYLE 1 Symbol V DSS V GS MRF9060LR1 P D MRF9060LSR1 T stg Symbol MRF9060LR1 R θJC MRF9060LSR1 M1 (Minimum) MRF9060LR1 MRF9060LSR1 Rev. 9, 5/2006 BROADBAND NI - 360 MRF9060LR1 NI - 360S MRF9060LSR1 Value Unit - 0.5, +65 Vdc - 0. Vdc 159 W 0.91 W/°C 219 W 1.25 W/° +150 °C 150 ° ...

  • Page 2

    ... Adc Dynamic Characteristics Input Capacitance ( Vdc ± 30 mV(rms) MHz Output Capacitance ( Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance ( Vdc ± 30 mV(rms) MHz MRF9060LR1 MRF9060LSR1 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS V GS(th) V GS(Q) V ...

  • Page 3

    ... IMD IRL G ps η IMD IRL P 1dB G ps η Min Typ Max 16 17 — — — — — 17 — — 39 — — — — — — 70 — — 17 — — 51 — MRF9060LR1 MRF9060LSR1 Unit dB % dBc dBc ...

  • Page 4

    ... V Tantalum Chip Capacitor C10 3.0 pF Chip Capacitor C12 0.5 pF Chip Capacitor (MRF9060) 0.7 pF Chip Capacitor (MRF9060S) C17 220 mF Electrolytic Chip Capacitor L1, L2 12.5 nH Inductors N1 Type Panel Mount, Stripline WB1, WB2 10 mil Brass Wear Blocks MRF9060LR1 MRF9060LSR1 Z10 Z11 DUT ...

  • Page 5

    ... Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout RF Device Data Freescale Semiconductor B2 C7 C13 WB1 WB2 C10 C17 V DD C15 C16 OUTPUT C14 C11 C12 MRF9060 900 MHz Rev−02 MRF9060LR1 MRF9060LSR1 5 ...

  • Page 6

    ... MHz −30 3rd Order −40 −50 5th Order −60 −70 0 OUTPUT POWER (WATTS) PEP out Figure 6. Intermodulation Distortion Products versus Output Power MRF9060LR1 MRF9060LSR1 6 TYPICAL CHARACTERISTICS Vdc (PEP) out I = 450 mA DQ IMD Two−Tone Measurement, ...

  • Page 7

    ... IMD 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Vdc 450 945 MHz f2 = 945.1 MHz OUTPUT POWER (WATTS) PEP out Figure 8. Power Gain, Efficiency, and IMD versus Output Power −20 −40 −60 100 MRF9060LR1 MRF9060LSR1 7 ...

  • Page 8

    ... Z Z Figure 9. Series Equivalent Source and Load Impedance MRF9060LR1 MRF9060LSR1 Ω load source f = 960 MHz f = 930 MHz f = 960 MHz f = 930 MHz 450 mA PEP DD DQ out source load MHz Ω Ω 930 0.80 - j0.10 2.08 - j0.65 945 0.80 - j0.05 2.07 - j0.38 960 0.81 - j0.10 2.04 - j0.37 = Test circuit impedance as measured from source gate to ground ...

  • Page 9

    ... RF Device Data Freescale Semiconductor NOTES MRF9060LR1 MRF9060LSR1 9 ...

  • Page 10

    ... MRF9060LR1 MRF9060LSR1 10 NOTES RF Device Data Freescale Semiconductor ...

  • Page 11

    ... B 0.225 0.235 5.72 5.97 C 0.105 0.155 2.67 3.94 D 0.210 0.220 5.33 5.59 E 0.035 0.045 0.89 1.14 F 0.004 0.006 0.10 0.15 H 0.057 0.067 1.45 1.70 K 0.085 0.115 2.16 2.92 M 0.355 0.365 9.02 9.27 N 0.357 0.363 9.07 9.22 R 0.227 0.23 5.77 5.92 S 0.225 0.235 5.72 5.97 aaa 0.005 REF 0.13 REF bbb 0.010 REF 0.25 REF ccc 0.015 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF9060LR1 MRF9060LSR1 11 ...

  • Page 12

    ... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF9060LR1 MRF9060LSR1 Document Number: MRF9060 Rev. 9, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...