mrf5s9080n Freescale Semiconductor, Inc, mrf5s9080n Datasheet
mrf5s9080n
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... RF Device Data Freescale Semiconductor = 600 mA Watts DQ out = 26 Volts 550 mA Operation DD Document Number: MRF5S9080N Rev. 1, 5/2006 MRF5S9080NR1 MRF5S9080NBR1 869 - 960 MHz GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF5S9080NR1 CASE 1484 - 04, STYLE 1 ...
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... Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V 869- 894 MHz, 920 - 960 MHz GSM EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset 1. Part is internally matched on input. MRF5S9080NR1 MRF5S9080NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I ...
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... Microstrip Z6 1.567″ x 0.059″ Microstrip Z7 0.734″ x 0.788″ Microstrip Figure 1. MRF5S9080NR1(NBR1) Test Circuit Schematic — 900 MHz Table 6. MRF5S9080NR1(NBR1) Test Circuit Component Designations and Values — 900 MHz Part C1, C2, C3 4.7 μF Chip Capacitors (1812) C4, C5 200B Chip Capacitors ...
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... C10 C12 Figure 2. MRF5S9080NR1(NBR1) Test Circuit Component Layout — 900 MHz MRF5S9080NR1 MRF5S9080NBR1 C16 R3 C14 C13 C15 C9 C21 C18 C19 C11 C20 C17 C3 C6 MRF5S9080N/NB Rev Device Data Freescale Semiconductor ...
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... Figure 6. Power Gain versus Output Power −20 −40 1000 1020 −20 −40 1000 1020 940 MHz 50 100 150 P , OUTPUT POWER (WATTS) CW out MRF5S9080NR1 MRF5S9080NBR1 = 600 mA 200 5 ...
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... 940 MHz −55 EDGE Modulation −60 −65 −70 −75 − OUTPUT POWER (WATTS) AVG. out Figure 11. Spectral Regrowth @ 400 kHz versus Output Power MRF5S9080NR1 MRF5S9080NBR1 6 TYPICAL CHARACTERISTICS - 900 MHz 70 6 25_C 60 5 85_C Vdc ...
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... Divide 2 MTTF factor by I for MTTF in a particular application. D GSM TEST SIGNAL Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz 200 kHz Figure 14. EDGE Spectrum 210 2 400 kHz 600 kHz Span 2 MHz MRF5S9080NR1 MRF5S9080NBR1 7 ...
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... MHz f = 845 MHz Z load f = 990 MHz Figure 15. Series Equivalent Source and Load Impedance — 900 MHz MRF5S9080NR1 MRF5S9080NBR1 8 Z source f = 845 MHz = 10 Ω Vdc 600 mA out source load MHz Ω Ω 845 5.31 - j5.59 1.18 - j0.34 865 6.07 - j4.16 1.09 - j0.29 890 5 ...
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... Microstrip Z6 1.567″ x 0.059″ Microstrip Z7 0.734″ x 0.788″ Microstrip Figure 16. MRF5S9080NR1(NBR1) Test Circuit Schematic — 800 MHz Table 7. MRF5S9080NR1(NBR1) Test Circuit Component Designations and Values — 800 MHz Part C1, C2, C3 4.7 μF Chip Capacitors (1812) C4, C5 200B Chip Capacitors ...
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... C10 C12 Figure 17. MRF5S9080NR1(NBR1) Test Circuit Component Layout — 800 MHz MRF5S9080NR1 MRF5S9080NBR1 10 C8 C16 R3 C14 C13 C15 C21 C2 C18 C19 C11 C20 C17 C22 MRF5S9080N/NB Rev Device Data Freescale Semiconductor ...
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... Figure 21. EVM and Drain Efficiency versus 80 η −20 −40 920 940 = 80 Watts 60 η IRL −20 −40 920 940 = 36 Watts η D EVM T = 25_C OUTPUT POWER (WATTS) AVG. out Output Power MRF5S9080NR1 MRF5S9080NBR1 100 11 ...
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... FREQUENCY (MHz) Figure 22. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency −65 −70 −75 −80 −85 1 MRF5S9080NR1 MRF5S9080NBR1 12 TYPICAL CHARACTERISTICS - 800 MHz − − 880 MHz Vdc DD EDGE Modulation I = 550 mA − ...
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... RF Device Data Freescale Semiconductor NOTES MRF5S9080NR1 MRF5S9080NBR1 13 ...
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... MRF5S9080NR1 MRF5S9080NBR1 14 NOTES RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor NOTES MRF5S9080NR1 MRF5S9080NBR1 15 ...
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... MRF5S9080NR1 MRF5S9080NBR1 16 PACKAGE DIMENSIONS ...
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... RF Device Data Freescale Semiconductor MRF5S9080NR1 MRF5S9080NBR1 17 ...
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... MRF5S9080NR1 MRF5S9080NBR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF5S9080NR1 MRF5S9080NBR1 19 ...
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... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5S9080NR1 MRF5S9080NBR1 Document Number: MRF5S9080N Rev. 1, 5/2006 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...