mrf5s9080n Freescale Semiconductor, Inc, mrf5s9080n Datasheet - Page 2

• Manufacturer Part Number: mrf5s9080n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF5S9080NR1 MRF5S9080NBR1
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V
869- 894 MHz, 920 - 960 MHz GSM EDGE Modulation
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Power Gain
Drain Efficiency
Input Return Loss
P
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
1. Part is internally matched on input.
out
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
@ 1 dB Compression Point
= 65 Vdc, V
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
GS
GS
= 400 μAdc)
= 600 mAdc, Measured in Functional Test)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Test Methodology
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 26 Vdc, I
DQ
Symbol
V
V
V
Rating
P1dB
EVM
I
I
I
DS(on)
C
SR1
SR2
C
GS(th)
GS(Q)
G
G
GSS
= 600 mA, P
IRL
DSS
DSS
η
η
oss
3
rss
ps
ps
D
D
out
Min
Package Peak Temperature
3.5
DD
—
—
—
—
—
—
17
55
—
80
—
—
—
—
—
2
= 80 W CW, f = 960 MHz
= 26 Vdc, I
0.27
18.5
260
Typ
600
- 15
- 63
- 77
2.8
3.9
1.8
2.5
60
90
19
42
—
—
—
1B (Minimum)
DQ
IV (Minimum)
A (Minimum)
= 550 mA, P
Class
Freescale Semiconductor
Max
500
3.5
4.5
0.3
10
20
—
—
—
—
—
—
—
—
—
- 9
1
RF Device Data
out
= 36 W Avg.,
% rms
μAdc
μAdc
nAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
°C
pF
pF
W
%
%