mrf1035mb Freescale Semiconductor, Inc, mrf1035mb Datasheet - Page 2

• Manufacturer Part Number: mrf1035mb
• Description: Microwave Power Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF1035MB
ELECTRICAL CHARACTERISTICS — continued
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS
2
INPUT
Output Capacitance
Common-Base Amplifier Power Gain
Collector Efficiency
Load Mismatch
RF
(V CB = 50 Vdc, I E = 0, f = 1.0 MHz)
(V CC = 50 Vdc, P out = 35 W Peak, f = 1090 MHz)
(V CC = 50 Vdc, P out = 35 W Peak, f = 1090 MHz)
(V CC = 50 Vdc, P out = 35 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
Z1
(Pulse Width = 10 s, Duty Cycle = 1%)
Characteristic
Z2
Z3
L1
Z4
C1, C2 — 220 pF 100 mil Chip Capacitor
C3 — 0.1 F
C4 — 10 F/75 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8 ID
Z1 – Z10 — Microstrip, See Photomaster
Board Material — 0.031 Glass Teflon
Board Material —
Figure 1. 1090 MHz Test Circuit
DUT
(T C = 25 C unless otherwise noted.)
Z5
r = 2.5
Symbol
L2
G PB
C ob
Z6
C2
Z7
Min
10
30
—
C3
Z8
No Degradation in Power Output
MOTOROLA RF DEVICE DATA
12.4
Typ
10
34
Z9
C4
+
Z10
Max
15
—
—
C1
+
–
50 Vdc
Unit
pF
dB
%
OUTPUT
RF