mrf6s9125n Freescale Semiconductor, Inc, mrf6s9125n Datasheet - Page 13

• Manufacturer Part Number: mrf6s9125n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
4.5
3.5
2.5
1.5
0.5
−45
−48
−51
−54
−57
−60
−63
−66
−69
−72
−75
5
4
3
2
1
0
900
0
V
I
V
I
f = 943 MHz
EDGE Modulation
DQ
DQ
Figure 22. Spectral Regrowth at 400 kHz
DD
DD
910
= 700 mA
= 700 mA
= 28 Vdc
= 28 Vdc
22.5
Figure 19. EVM versus Frequency
920
P
versus Output Power
out
930
, OUTPUT POWER (WATTS)
45
f, FREQUENCY (MHz)
940
P
out
67.5
= 70 W Avg.
950
−52.5
−67.5
−82.5
−60
−75
60 W Avg.
20 W Avg.
900
960
T
90
C
Figure 21. Spectral Regrowth at 400 kHz and
= 25_C
SR @ 400 kHz
V
f = 943 MHz, EDGE Modulation
SR @ 600 kHz
DD
970
910
EDGE CHARACTERIZATION
= 28 Vdc, I
112.5
980
600 kHz versus Frequency
920
DQ
990
f, FREQUENCY (MHz)
= 700 mA
135
930
940
15
12
9
6
3
0
1
70 W Avg.
−53
−56
−59
−62
−65
−68
−71
−74
−77
−80
−83
Figure 20. EVM and Drain Efficiency versus
V
I
f = 943 MHz
EDGE Modulation
950
DQ
DD
0
= 700 mA
20 W Avg.
= 28 Vdc
P
V
I
f = 943 MHz
EDGE Modulation
DQ
Figure 23. Spectral Regrowth at 600 kHz
out
DD
960
= 700 mA
= 70 W Avg.
= 28 Vdc
20 W Avg.
P
22.5
out
60 W Avg.
60 W Avg.
, OUTPUT POWER (WATTS) AVG.
970
Output Power
P
versus Output Power
out
10
, OUTPUT POWER (WATTS)
980
45
MRF6S9125NR1 MRF6S9125NBR1
η
67.5
D
T
EVM
C
= 25_C
90
100
T
C
112.5
= 25_C
300
75
60
45
30
15
0
135
13