mrf6s20010n Freescale Semiconductor, Inc, mrf6s20010n Datasheet - Page 3

• Manufacturer Part Number: mrf6s20010n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical 2 - Carrier W - CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) V
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Typical N - CDMA Performances (In Freescale Test Fixture, 50 ohm system) V
1930 MHz<Frequency<1990 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V
1805 - 1880 MHz, EDGE Modulation
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
Intermodulation Distortion
Adjacent Channel Power Ratio
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
Adjacent Channel Power Ratio
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Characteristic
(T
out
out
out
C
= 25°C unless otherwise noted) (continued)
= 1 W CW
= 1 W CW
= 4 W CW
Symbol
ACPR
ACPR
DD
EVM
SR1
SR2
G
IM3
G
G
η
G
η
G
η
G
ps
ps
ps
D
D
D
F
F
F
= 28 Vdc, I
Min
DQ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DD
= 130 mA, P
MRF6S20010NR1 MRF6S20010GNR1
DD
= 28 Vdc, I
= 28 Vdc, I
15.5
15.5
Typ
- 47
- 49
- 60
- 60
- 70
0.3
0.3
0.3
1.3
15
16
16
33
DQ
out
DQ
= 130 mA, P
= 1 W Avg.,
= 130 mA, P
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
out
out
= 4 W Avg.,
=
% rms
Unit
dBc
dBc
dBc
dBc
dBc
dB
dB
dB
dB
dB
dB
%
%
%
3