mrf6s24140h Freescale Semiconductor, Inc, mrf6s24140h Datasheet
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mrf6s24140h Summary of contents
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... Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 1200 mA Operation DD Document Number: MRF6S24140H Rev. 0, 3/2007 MRF6S24140HR3 MRF6S24140HSR3 2450 MHz, 140 LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 ...
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... MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF6S24140HR3 MRF6S24140HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... Microstrip Z6, Z7 0.178″ x 0.050″ Microstrip Z8 0.097″ x 1.170″ Microstrip Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values Part B1 Ω, 100 MHz Short Ferrite Beads, Surface Mount C1, C2, C3, C4, C5 ...
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... R1 C10 C9 C8* C1 C14 + + C13 C12* * Stacked Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz MRF6S24140HR3 MRF6S24140HSR3 C7 C11* C17 + C15 C18 C16 C2 MRF6S24140H Rev. 1.0 C20 C19 + C21 C22 RF Device Data Freescale Semiconductor ...
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... Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 6. MTTF versus Junction Temperature 500 100 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° 140 W CW, and η Vdc 45%. DD out D MRF6S24140HR3 MRF6S24140HSR3 230 250 5 ...
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... Figure 7. Series Equivalent Source and Load Impedance MRF6S24140HR3 MRF6S24140HSR3 2450 MHz Z source = 10 Ω 2450 MHz Z load Vdc 1200 mA 140 out source load MHz W W 2450 4.55 + j4.9 1.64 - j6. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground ...
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... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 F 0.003 0.006 0.08 H 0.057 0.067 1.45 K 0.170 0.210 4.32 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRF6S24140HR3 MRF6S24140HSR3 13.8 5.08 1.14 0.15 1.70 5.21 3.51 5.08 1.14 0.15 1.70 5.33 7 ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Mar. 2007 • Initial Release of Data Sheet MRF6S24140HR3 MRF6S24140HSR3 8 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
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... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF6S24140H Rev. 0, 3/2007 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...