mrf6s24140h Freescale Semiconductor, Inc, mrf6s24140h Datasheet - Page 2

• Manufacturer Part Number: mrf6s24140h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF6S24140HR3 MRF6S24140HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fifxture, 50 ohm system) V
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
GS
GS
= 300 μAdc)
= 1300 mAdc)
= 3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
GSS
IRL
DSS
DSS
η
= 1300 mA, P
rss
ps
D
Min
0.1
—
—
—
—
13
23
—
—
—
out
1
2
= 28 W Avg., f1 = 2300 MHz,
0.21
15.2
Typ
- 37
- 40
- 15
2.8
25
—
—
—
2
2
IV (Minimum)
2 (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
500
0.3
- 35
- 38
10
17
—
—
—
1
3
4
RF Device Data
μAdc
μAdc
nAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%