mrf6s27050h Freescale Semiconductor, Inc, mrf6s27050h Datasheet - Page 7

• Manufacturer Part Number: mrf6s27050h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
20
19
18
17
16
15
14
13
12
35
30
25
20
15
10
0.1
34
G
V
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
Figure 13. Drain Efficiency and Error Vector
η
Figure 11. Power Gain and Drain Efficiency
ps
DD
D
= 28 Vdc, I
35
Magnitude versus Output Power
η
D
P
versus CW Output Power
out
36
T
DQ
C
, OUTPUT POWER (WATTS) CW
P
= −30_C
out
= 500 mA
1
25_C
85_C
, OUTPUT POWER (dBm)
37
38
EVM
V
I
f = 2600 MHz
DQ
39
DD
= 500 mA
10
= 28 Vdc
40
−30_C
TYPICAL CHARACTERISTICS
41
85_C
25_C
100
42
64
56
48
40
32
24
16
8
0
6
5
4
3
2
1
17
16
15
14
Figure 14. MTTF Factor versus Junction Temperature
10
10
10
10
0.3
9
8
7
6
90
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
Figure 12. Power Gain versus Output Power
110
10
130
T
P
J
out
20
, JUNCTION TEMPERATURE (°C)
D
MRF6S27050HR3 MRF6S27050HSR3
2
, OUTPUT POWER (WATTS) CW
for MTTF in a particular application.
V
150
DD
30
= 24 V
170
40
190
28 V
50
210
I
f = 2600 MHz
DQ
= 500 mA
60
230
32 V
2
70
250
7