2pb709art

Manufacturer Part Number2pb709art
Description2pb709art 45 V, 100 Ma Pnp General-purpose Transistor
ManufacturerNXP Semiconductors
2pb709art datasheet
 


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NXP Semiconductors
3
10
= 1
Z
th(j-a)
0.75
(K/W)
0.50
0.33
2
10
0.20
0.10
0.05
0.02
10
0.01
0
1
5
4
10
10
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
7. Characteristics
Table 7.
T
= 25 C unless otherwise specified.
amb
Symbol Parameter
I
CBO
I
EBO
h
FE
V
CEsat
f
T
C
c
[1]
Pulse test: t
2PB709ART_1
Product data sheet
3
2
1
10
10
10
Characteristics
Conditions
collector-base cut-off
V
= 45 V; I
CB
current
V
= 45 V; I
CB
T
= 150 C
j
emitter-base cut-off
V
= 5 V; I
EB
current
DC current gain
V
= 10 V;
CE
I
= 2 mA
C
collector-emitter
I
= 100 mA;
C
saturation voltage
I
= 10 mA
B
transition frequency
V
= 10 V;
CE
I
= 1 mA;
C
f = 100 MHz
collector capacitance V
= 10 V;
CB
I
= i
= 0 A;
E
e
f = 1 MHz
300 s;
0.02.
p
Rev. 01 — 19 March 2007
2PB709ART
45 V, 100 mA PNP general-purpose transistor
2
1
10
10
Min
Typ
= 0 A
-
-
E
= 0 A;
-
-
E
= 0 A
-
-
C
210
-
[1]
-
-
70
-
-
-
© NXP B.V. 2007. All rights reserved.
006aaa991
3
10
t
(s)
p
Max
Unit
10
nA
5
A
10
nA
340
500
mV
-
MHz
5
pF
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