mcf51ac256 Freescale Semiconductor, Inc, mcf51ac256 Datasheet - Page 35

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mcf51ac256

Manufacturer Part Number
mcf51ac256
Description
Mcf51ac256 Coldfire Microcontroller
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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2.14
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
2.14.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller
are measured in a TEM cell in two package orientations (North and East). For more detailed information concerning the
evaluation results, conditions and setup, please refer to the EMC Evaluation Report for this device.
Freescale Semiconductor
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
1
2
3
4
5
6
7
8
9
EMC Performance
Radiated Emissions
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
MCF51AC256 ColdFire Microcontroller Data Sheet, Rev.1
Characteristic
T
5
L
3
2
to T
Preliminary—Subject to Change Without Notice
H
= –40°C to 105°C
Table 21. Flash Characteristics
2
4
T = 25°C
2
2
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
15
5
Preliminary Electrical Characteristics
20,000
Typical
4000
100,000
9
4
100
1
Max
6.67
200
5.5
5.5
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
35

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