mcf51jm128 Freescale Semiconductor, Inc, mcf51jm128 Datasheet - Page 16

• Manufacturer Part Number: mcf51jm128
• Description: Mcf51jm128 Coldfire Microcontroller Flexis 32-bit V1 Coldfire? Usb Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

Preliminary Electrical Characteristics
The average chip-junction temperature (T
where:
For most applications, P
is:
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring P
for a known T
value of T
2.4
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade Integrated Circuits.
(http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete DC parametric and functional testing is performed per the applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
16
A
Human Body
Latch-up
.
Electrostatic Discharge (ESD) Protection Characteristics
T
I
A
DD
A
2
3
4
. Using this value of K, the values of P
= Ambient temperature, °Cθ
Junction to Ambient Natural Convection
1s - Single Layer Board, one signal layer
2s2p - Four Layer Board, 2 signal and 2 power layers
× V
Model
DD
I/O
, Watts — chip internal powerP
<< P
int
and can be neglected. An approximate relationship between P
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Table 8. ESD and Latch-up Test Conditions
MCF51JM128 ColdFire Microcontroller, Rev. 0
K = P
J
) in °C can be obtained from:
D
JA
P
T
= Package thermal resistance, junction-to-ambient, °C/WP
× (T
D
J
= K ÷ (T
= T
A
D
+ 273°C) + θ
A
Description
and T
I/O
+ (P
= Power dissipation on input and output pins — user determined
J
J
+ 273°C)
D
can be obtained by solving equations 1 and 2 iteratively for any
× θ
JA
JA
)
× (P
D
)
2
Symbol
R1
C
–
D
and T
Value
Freescale Semiconductor
1500
–2.5
100
7.5
3
J
(if P
D
D
= P
Unit
I/O
(at equilibrium)
pF
Ω
V
V
int
is neglected)
+ P
I/O
Eqn. 1
Eqn. 2
Eqn. 3
P
int
=