mt4lc4m16r6 Micron Semiconductor Products, mt4lc4m16r6 Datasheet - Page 15

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mt4lc4m16r6

Manufacturer Part Number
mt4lc4m16r6
Description
4 Meg X 16 Edo Dram
Manufacturer
Micron Semiconductor Products
Datasheet

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TIMING PARAMETERS
4 Meg x 16 EDO DRAM
D29_2.p65 – Rev. 5/00
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AA
ACH
AR
ASC
ASR
AWD
CAC
CAH
CAS
CLCH
CLZ
CRP
CSH
CWD
CWL
DH
ADDR
CAS#
RAS#
WE#
OE#
DQ
V
V
MIN
V
V
V
V
V
V
V
V
V
V
IOH
IOL
12
38
42
38
28
0
0
8
8
5
0
5
8
8
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
-5
10,000
MAX
25
13
t CRP
t ASR
(LATE WRITE and READ-MODIFY-WRITE cycles)
ROW
MIN
15
45
49
10
10
45
35
10
10
0
0
5
0
5
t RAD
t RAH
t AR
-6
10,000
MAX
30
15
t RCD
READ-WRITE CYCLE
OPEN
t ASC
t RCS
UNITS
t RWC
t RAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t CLZ
COLUMN
15
t CAH
t RSH
t CSH
t CAS
t CWD
t RWD
t AWD
t AA
t RAC
t CAC
t OE
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DS
OD
OE
OEH
RAC
RAD
RAH
RAS
RCD
RCS
RP
RSH
RWC
RWD
RWL
WP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID D
OUT
t OD
MIN
116
50
11
30
13
67
13
0
0
8
9
7
0
5
t DS
VALID D
-5
t CWL
t RWL
t WP
t DH
t ACH
10,000
IN
MAX
12
12
50
t OEH
MIN
140
10
12
10
60
14
40
15
79
15
0
0
0
5
OPEN
4 MEG x 16
EDO DRAM
t RP
DON’ T CARE
UNDEFINED
-6
©2000, Micron Technology, Inc.
ROW
10,000
MAX
15
15
60
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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