tea6300t NXP Semiconductors, tea6300t Datasheet - Page 7

• Manufacturer Part Number: tea6300t
• Description: Sound Fader Control Circuit
• Manufacturer: NXP Semiconductors

Philips Semiconductors
May 1990
(S
(S
(S
(S
(S
(S
P
Source selector
Z
Z
R
C
G
V
V
V
THD
V
V
B
i
o
S
no
b int
i(rms)
i(rms)
no
o
Sound fader control circuit
L
L
v
N)/N
N)/N
N)/N
N)/N
N)/N
N)/N
/V
ref
SYMBOL
Signal plus noise-to-noise ratio
Noise output power
Crosstalk (20 log V
Input impedance
Output impedance
Output load resistance
Output load capacity
Input isolation
Voltage gain
Internal bias voltage ratio
Maximum input voltage level (RMS value)
Total harmonic distortion
Noise output voltage
DC offset voltage
bass and treble linear; notes 1 and 2
CCIR 468-2 weighted; quasi peak
V
V
V
V
V
V
mute position, only contribution of
TEA6300; power amplifier for 25 W
between bus inputs and signal outputs
G
not selected source; frequency range
40 Hz to 12,5 kHz
R
THD < 0,5%
THD < 0,5%; V
V
weighted CCIR 468-2, quasi peak
between any inputs
i
i
i
i
i
i
i
V
L
= 50 mV; V
= 500 mV; V
= 50 mV; V
= 500 mV; V
= 50 mV; V
= 500 mV; V
= 500 mV; R
= 0 dB; bass and treble linear
10 k
o
o
o
PARAMETER
o
o
o
L
= 46 mV; P
= 200 mV; P
= 500 mV; P
CC
= 45 mV; P
= 200 mV; P
= 500 mV; P
= 10 k
bus(p-p)
= 7,5 V
/V
o(rms)
o
o
o
o
= 50 mW
o
o
= 50 mW
= 1 W
= 6 W
= 1 W
= 6 W
)
7
65
65
20
10
0
MIN.
65
67
70
78
70
85
110
30
80
0
1
1,65
1,5
9
TYP.
Product specification
10
40
100
200
0,1
20
10
MAX.
TEA6300T
TEA6300
dB
dB
dB
dB
dB
dB
nW
dB
k
k
pF
dB
dB
V
V
%
mV
V
UNIT