mc33899vwr2 Freescale Semiconductor, Inc, mc33899vwr2 Datasheet - Page 9

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mc33899vwr2

Manufacturer Part Number
mc33899vwr2
Description
Programmable H-bridge Power Ic
Manufacturer
Freescale Semiconductor, Inc
Datasheet
Table 4. Dynamic Electrical Characteristics
reflect the approximate parameter means at T
Notes
Analog Integrated Circuit Device Data
Freescale Semiconductor
PWM Frequency
PWM / Output Duty Cycle Accuracy
Short Circuit Filter (S0 and S1)
Minimum PWM Low Pulse Width
Low-Side Comparator One Shot
Low-Side Comparator Blank Time
Overtemperature Shutdown Filter (time before Die Temp bit is set),
Enable Lead Time
Enable Lag Time
Delay Until Output Shuts Off
Dead Timer
Open Load Fault Delay
Overvoltage Shutdown Filter
Sleep Recovery Time
Slew Time S0 and S1
(Output Load = 5.0 mH and 1.6 Ω, 30% to 70%, V
10.
11.
8.
9.
Characteristics at - 40°C ≤ T
Frequency = 10 kHz, RS = 10 kΩ, Slew Time = 1X, Duty cycle = 50%
Pulse Duration After a Low-Side Comparator Trip
Blanking Time After a Low-Side Comparator Pulse
Short Circuit Detection or EN1 Falling or EN2 Falling Until H-Bridge Disables
Time Between High-Side MOSFET and Low-Side MOSFET Transition
Duration of Fault Condition Until Fault Gets Latched In
Time from VIGNP > V
Slew Mode = 1X
Slew Mode = 2X
Slew Mode = 4X
RS= 50 kΩ
RS = 10 kΩ, Short
RS = 50 kΩ
RS = 10 kΩ, Short
RS = 50 kΩ
RS = 10 kΩ, Short
Design information.
Guaranteed by characterization in the development phase. Parameter not tested.
Sleep recovery time is the time from EN going high until the outputs are ready to respond to input. This time is dependent on the recovery
time of V
clearing of the POR condition
By design, if the RS input is left open, the slew time is the same as when shorted to GND. However, this is a high-impedance input and
will be susceptible to external noise sources unless terminated appropriately. It is highly recommended to terminate this pin with either
a ground or one of the program resistors .
(9)
CCL
(8)
(8)
(8)
and V
(8)(9)(10)
(11)
OV
CCL_POR
to MOSFET Output Disable
Characteristic
A
(8)
. The recommended value for the V
≤ 125°C, 4.75 V ≤ V
(See + 3.3 V Input (V
DYNAMIC ELECTRICAL CHARACTERISTICS
IGNP
A
= 25°C under nominal conditions unless otherwise noted.
= 14.5 V)
CCL
CC
≤ 5.25 V, 6.0 V ≤ V
) on page
(8)
CCL
12).
capacitor is designed to permit initialization of internal logic prior to
S0 / S1
PWM
OUT
Symbol
t
t
IGNP
t
t
f
t
SODLY
t
SLEEP
t
t
t
t
t
DEAD
LSCB
LEAD
PWM
SCF
OTF
FDO
OVS
LSC
LAG
ACC
MIN
RS
≤ 26.5 V unless otherwise noted. Typical values
DYNAMIC ELECTRICAL CHARACTERISTICS
Min
-4.5
140
200
100
5.0
5.0
5.0
5.0
1.0
1.6
0.2
2.8
0.5
5.0
1.2
50
ELECTRICAL CHARACTERISTICS
Typ
150
13.5
12.8
Max
400
200
4.5
0.2
5.0
3.0
3.2
0.8
6.3
1.5
3.0
11
11
10
10
Unit
kHz
µs
µs
µs
µs
µs
ns
ns
µs
µs
µs
µs
µs
µs
%
33899
9

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