gtl2002dc NXP Semiconductors, gtl2002dc Datasheet

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gtl2002dc

Manufacturer Part Number
gtl2002dc
Description
2-bit Bi-directional Low Voltage Translator
Manufacturer
NXP Semiconductors
Datasheet

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1. General description
2. Features
The Gunning Transceiver Logic - Transceiver Voltage Clamps (GTL-TVC) provide
high-speed voltage translation with low ON-state resistance and minimal propagation
delay. The GTL2002 provides 2 NMOS pass transistors (Sn and Dn) with a common gate
(GREF) and a reference transistor (SREF and DREF). The device allows bidirectional
voltage translations between 1.0 V and 5.0 V without use of a direction pin.
When the Sn or Dn port is LOW the clamp is in the ON-state and a low resistance
connection exists between the Sn and Dn ports. Assuming the higher voltage is on the Dn
port, when the Dn port is HIGH, the voltage on the Sn port is limited to the voltage set by
the reference transistor (SREF). When the Sn port is HIGH, the Dn port is pulled to V
the pull-up resistors. This functionality allows a seamless translation between higher and
lower voltages selected by the user, without the need for directional control.
All transistors have the same electrical characteristics and there is minimal deviation from
one output to another in voltage or propagation delay. This is a benefit over discrete
transistor voltage translation solutions, since the fabrication of the transistors is
symmetrical. Because all transistors in the device are identical, SREF and DREF can be
located on any of the other two matched Sn/Dn transistors, allowing for easier board
layout. The translator's transistors provide excellent ESD protection to lower voltage
devices and at the same time protect less ESD-resistant devices.
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GTL2002
2-bit bidirectional low voltage translator
Rev. 06 — 21 December 2007
2-bit bidirectional low voltage translator
Allows voltage level translation between 1.0 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5 V
buses, which allows direct interface with GTL, GTL+, LVTTL/TTL and 5 V CMOS levels
Provides bidirectional voltage translation with no direction pin
Low 6.5
Supports hot insertion
No power supply required; will not latch up
5 V tolerant inputs
Low standby current
Flow-through pinout for ease of printed-circuit board trace routing
ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per
JESD22-A115, and 1000 V CDM per JESD22-C101
Packages offered: SO8, TSSOP8 (MSOP8), VSSOP8, XQFN8U
ON-state resistance (R
on
) between input and output pins (Sn/Dn)
Product data sheet
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gtl2002dc Summary of contents

Page 1

GTL2002 2-bit bidirectional low voltage translator Rev. 06 — 21 December 2007 1. General description The Gunning Transceiver Logic - Transceiver Voltage Clamps (GTL-TVC) provide high-speed voltage translation with low ON-state resistance and minimal propagation delay. The GTL2002 provides 2 ...

Page 2

... GTL2002D GTL2002DP GTL2002DC GTL2002GM [1] Also known as MSOP8. 4.1 Ordering options Table 2. Type number GTL2002D GTL2002DP GTL2002DC GTL2002GM [1] ‘X’ will change based on date code. 5. Functional diagram Fig 1. Functional diagram GTL2002_6 Product data sheet 2 C-bus signal levels or GTL/GTL+ translation to LVTTL/TTL signal Ordering information ...

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... DREF GREF GTL2002_6 Product data sheet 1 8 GND GREF 2 7 SREF DREF GTL2002D 002aac777 1 8 GREF DREF GTL2002DC GND 002aac779 Pin description Pin SO8, TSSOP8, VSSOP8 XQFN8U ...

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... NXP Semiconductors 7. Functional description Refer to 7.1 Function selection Table 4. Assuming the higher voltage level HIGH voltage level LOW voltage level Don’t care. [1] GREF [1] GREF should be at least 1.5 V higher than SREF for best translator operation. [ not pulled up or pulled down. ...

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... NXP Semiconductors 8. Application design-in information 8.1 Bidirectional translation For the bidirectional clamping configuration, higher voltage to lower voltage or lower voltage to higher voltage, the GREF input must be connected to DREF and both pins pulled to HIGH side V DREF is recommended. The processor output can be totem pole or open-drain (pull-up ...

Page 6

... NXP Semiconductors 8.2 Unidirectional down translation For unidirectional clamping, higher voltage to lower voltage, the GREF input must be connected to DREF and both pins pulled to the higher side V (typically 200 filter capacitor on DREF is recommended. Pull-up resistors are required if the chip set I/O are open-drain. The opposite side of the reference transistor (SREF) is connected to the processor core supply voltage ...

Page 7

... NXP Semiconductors 8.4 Sizing pull-up resistor The pull-up resistor value needs to limit the current through the pass transistor when the ON state to about 15 mA. This will guarantee a pass voltage of 260 mV to 350 mV. If the current through the pass transistor is higher than 15 mA, the pass voltage will also be higher in the ON state ...

Page 8

... NXP Semiconductors 9. Limiting values Table 7. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V SREF V DREF V GREF REFK max T stg [1] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperature which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 C ...

Page 9

... NXP Semiconductors 11. Static characteristics Table 9. Static characteristics +85 C, unless otherwise specified. amb Symbol Parameter V LOW-level output voltage OL V input clamping voltage IK I gate input leakage current LI(gate) C input capacitance at gate ig C off-state input/output capacitance io(off) C on-state input/output capacitance ...

Page 10

... NXP Semiconductors 12. Dynamic characteristics 12.1 Dynamic characteristics for translator-type application Table 10 + amb GND = Symbol t PLH t PHL [1] All typical values are measured at V [2] Propagation delay guaranteed by characterization. Fig 9. The input (Sn) to output (Dn) propagation delays GTL2002_6 Product data sheet Dynamic characteristics for translator-type application = 1.365 V to 1.635 V ...

Page 11

... NXP Semiconductors 12.2 Dynamic characteristics for CBT-type application Table 11 + amb Symbol t PD [1] This parameter is warranted by the ON-state resistance at GREF = 4.5 V, but is not directly production tested. The propagation delay is based on the RC time constant of the typical ON-state resistance of the switch and a load capacitance of 50 pF, when driven by an ideal voltage source (zero output impedance). ...

Page 12

... NXP Semiconductors 13. Test information Fig 11. Load circuit for translator-type applications Fig 12. Load circuit for CBT-type application Table 12. Test t PD GTL2002_6 Product data sheet V V DD1 DD2 200 k DREF GREF SREF V ref pulse generator from output under test Test data are given in Table 12 ...

Page 13

... NXP Semiconductors 14. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

Page 14

... NXP Semiconductors TSSOP8: plastic thin shrink small outline package; 8 leads; body width pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0.95 mm 1.1 0.25 0.05 0.80 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...

Page 15

... NXP Semiconductors VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0. 0.12 0.00 0.60 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...

Page 16

... NXP Semiconductors XQFN8U: plastic extremely thin quad flat package; no leads; 8 terminals; UTLP based; body 1.6 x 1.6 x 0.5 mm terminal 1 index area metal area not for soldering 2 1 terminal 1 index area DIMENSIONS (mm are the original dimensions) A UNIT max 0.05 0.25 1.65 mm 0.5 0.00 0.15 1.55 OUTLINE VERSION IEC ...

Page 17

... NXP Semiconductors 15. Soldering This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 15.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits ...

Page 18

... NXP Semiconductors 15.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • ...

Page 19

... NXP Semiconductors Fig 17. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 16. Abbreviations Table 15. Acronym CBT CDM CMOS CPU ESD GTL HBM I C-bus LVTTL MM NMOS ...

Page 20

... NXP Semiconductors 17. Revision history Table 16. Revision history Document ID Release date GTL2002_6 20071221 • Modifications: Section 2 JESD22-A115” • Section 2 from “XQFN8” to “XQFN8U” GTL2002_5 20070813 GTL2002_4 20060829 GTL2002_3 20040929 (9397 750 13058) GTL2002_2 20030401 (9397 750 11349) GTL2002_1 20000216 ...

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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 22

... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4.1 Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 7.1 Function selection Application design-in information . . . . . . . . . . 5 8.1 Bidirectional translation 8.2 Unidirectional down translation 8.3 Unidirectional up translation . . . . . . . . . . . . . . . 6 8.4 Sizing pull-up resistor . . . . . . . . . . . . . . . . . . . . 7 9 Limiting values ...

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