bu4508af-hg NXP Semiconductors, bu4508af-hg Datasheet - Page 3

• Manufacturer Part Number: bu4508af-hg
• Description: Bu4508af Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 1998
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
hs
SYMBOL
V
C
hs
SYMBOL
I
I
I
BV
V
V
V
h
h
hs
SYMBOL
C
t
t
t
t
Silicon Diffused Power Transistor
CES
CES
EBO
s
f
s
f
FE
FE
isol
CEOsust
CEsat
BEsat
isol
c
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltages I
Base-emitter saturation voltage
DC current gain
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
2
CONDITIONS
R.H.
CONDITIONS
V
V
T
V
I
I
L = 25 mH
I
I
I
CONDITIONS
I
I
I
B
B
C
C
C
C
E
Csat
Csat
j
BE
BE
EB
= 1 mA
= 0 A; I
= 5.0 A; I
= 5.0 A; I
= 100 mA; V
= 5.0 A; V
= 0 A; V
= 125 ˚C
65 % ; clean and dustfree
= 0 V; V
= 0 V; V
= 6.0 V; I
= 5.0 A; I
= 4 A; I
2
C
CB
= 100 mA;
B1
B
B
CE
CE
CE
= 10 V; f = 1 MHz
= 1.25 A
= 1.25 A
C
B1
= 0.8 A;(I
= V
= V
= 0 A
CE
= 5 V
= 1.0 A;(I
= 5 V
CESMmax
CESMmax
B2
;
B2
= -2.0 A)
= -2.5 A)
MIN.
MIN.
0.85
800
7.5
4.2
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
13.5
0.94
0.35
0.17
5.7
3.2
1.9
22
12
80
-
-
-
-
-
-
Product specification
BU4508AF
MAX.
MAX.
MAX.
2500
1.03
0.48
100
1.0
2.0
3.0
7.3
4.3
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
mA
mA
uA
pF
pF
V
V
V
V
V
s
s
s
s