cbt3253db NXP Semiconductors, cbt3253db Datasheet - Page 4

• Manufacturer Part Number: cbt3253db
• Description: Dual 1-of-4 Fet Multiplexer/demultiplexer
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
2. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
NOTE:
1. All unused control inputs of the device must be held at V
DC ELECTRICAL CHARACTERISTICS
NOTES:
1. All typical values are at V
2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch.
2002 Nov 04
SYMBOL
SYMBOL
SYMBOL
C
Dual 1-of-4 FET multiplexer/demultiplexer
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
On-state resistance is determined by the lowest voltage of the two (A or B) terminals.
IO(OFF)
T
V
V
T
r
V
V
I
V
V
amb
C
on
on
V
I
CC
I
CC
stg
CC
I
K
CC
IH
IL
IK
P
I
I
I
3
DC supply voltage
DC input voltage
Continuous channel current
Input clamp current
Storage temperature range
DC supply voltage
High-level input voltage
Low-level Input voltage
Operating free-air temperature range
Input clamp voltage
Pass voltage
Input leakage current
Quiescent supply current
Control inputs
Control pins
Power-off leakage current
On-resistance
PARAMETER
2
CC
PARAMETER
2
= 5 V, T
amb
1
V
= 25 C.
CC
CC
A port
B port
PARAMETER
= 4.5 V
V
V
V
V
V
other inputs at V
V
V
V
V
V
V
CC
I
CC
CC
CC
I
O
O
I
I
I
CC
= 3 V or 0
= V
= 0 V; I
= 0 V; I
= 2.4 V; I
= 3 V or 0; OE = V
= 3 V or 0; OE = V
= 4.5 V; I
= 5 V; V
= 5.5 V; I
= 5.5 V, one input at 3.4 V,
or GND to ensure proper device operation.
CC
TEST CONDITIONS
= 5.5 V; I/O = –100 A
I
I
= 64 mA
= 30 mA
I
I
= –15 mA
4
I
O
= 5.5 or GND
= –18 mA
= 0, V
CONDITIONS
CC
V
or GND
I/O
I
CC
CC
= V
< 0
CC
or GND
MIN
3.4
—
—
—
—
—
—
—
—
—
—
MIN
T
–40
4.5
—
amb
2
CC
–0.5 to +7.0
–0.5 to +7.0
–65 to +150
= –40 to +85 C
RATING
LIMITS
LIMITS
or GND
TYP
23.5
128
–50
3.6
4.5
6.5
10
—
—
—
—
5
5
1
MAX
+85
5.5
0.8
—
CBT3253
MAX
–1.2
3.9
2.5
15
—
—
—
3
7
7
1
Product data
UNIT
mA
mA
V
V
C
UNIT
UNIT
mA
pF
pF
V
V
V
V
V
C
A
A