m58lw032d STMicroelectronics, m58lw032d Datasheet

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m58lw032d

Manufacturer Part Number
m58lw032d
Description
32 Mbit 4mb X8, 2mb X16, Uniform Block 3v Supply Flash Memory
Manufacturer
STMicroelectronics
Datasheet

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FEATURES SUMMARY
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August 2004
WIDE x8 or x16 DATA BUS for HIGH
BANDWIDTH
SUPPLY VOLTAGE
ACCESS TIME
PROGRAMMING TIME
32 UNIFORM 64 KWord/128KByte MEMORY
BLOCKS
ENHANCED SECURITY
PROGRAM and ERASE SUSPEND
128 bit PROTECTION REGISTER
COMMON FLASH INTERFACE
100, 000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
PACKAGES
V
Erase and Read operations
Random Read 90ns,110ns
Page Mode Read 90ns/25ns, 110ns/25ns
16 Word Write Buffer
12 s Word effective programming time
Block Protection/ Unprotection
V
128 bit Protection Register with 64 bit
Unique Code in OTP area
Manufacturer Code: 0020h
Device Code M58LW032D: 0016h
Compliant with Lead-Free Soldering
Processes
Lead-Free Versions
DD
PEN
= V
signal for Program Erase Enable
DDQ
= 2.7 to 3.6V for Program,
32 Mbit (4Mb x8, 2Mb x16, Uniform Block)
Figure 1. Packages
3V Supply Flash Memory
TSOP56 (N)
14 x 20 mm
TBGA64 (ZA)
10 x 13 mm
TBGA
M58LW032D
1/50

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m58lw032d Summary of contents

Page 1

... I COMMON FLASH INTERFACE I 100, 000 PROGRAM/ERASE CYCLES per BLOCK I ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code M58LW032D: 0016h I PACKAGES – Compliant with Lead-Free Soldering Processes – Lead-Free Versions August 2004 32 Mbit (4Mb x8, 2Mb x16, Uniform Block) 3V Supply Flash Memory Figure 1 ...

Page 2

... M58LW032D TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 3. TSOP56 Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 4. TBGA64 Connections (Top view through package Figure 5. Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Address Input (A0 Address Inputs (A1-A21 Data Inputs/Outputs (DQ0-DQ15 Chip Enables (E0, E1, E2 Output Enable (G) ...

Page 3

... Table 16. Page Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 11.Write AC Waveform, Write Enable Controlled Table 17. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 12.Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Table 18. Write AC Characteristics, Chip Enable Controlled Figure 13.Reset, Power-Down and Power-Up AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Table 19. Reset, Power-Down and Power-Up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 30 M58LW032D 3/50 ...

Page 4

... M58LW032D PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Figure 14.TSOP56 - 56 lead Plastic Thin Small Outline mm, Package Outline . . . . . . . . 31 Table 20. TSOP56 - 56 lead Plastic Thin Small Outline mm, Package Mechanical Data . 31 Figure 15.TBGA64 - 10x13mm ball array 1mm pitch, Package Outline . . . . . . . . . . . . . . . . 32 Table 21. TBGA64 - 10x13mm ball array pitch, Package Mechanical Data . . . . . . . . 32 PART NUMBERING ...

Page 5

... SUMMARY DESCRIPTION The M58LW032D Mbit (4Mb 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7V to 3.6V) core supply. The memory is divided into 32 blocks of 1Mbit that can be erased independently possible to preserve valid data while old data is erased ...

Page 6

... M58LW032D Figure 2. Logic Diagram DDQ 22 A0-A21 V PEN BYTE W M58LW032D SSQ 6/50 Table 1. Signal Names A0 A1-A21 BYTE DQ0-DQ15 DQ0-DQ15 RP STS STS V PEN DDQ SSQ NC AI06234b DU Address input (used in X8 mode only) Address inputs ...

Page 7

... V DD A15 A14 A13 A12 M58LW032D V PEN A11 A10 M58LW032D STS DQ15 DQ7 DQ14 DQ6 V SS DQ13 DQ5 DQ12 DQ4 V DDQ V SSQ DQ11 DQ3 DQ10 DQ2 V DD DQ9 DQ1 DQ8 DQ0 A0 BYTE ...

Page 8

... M58LW032D Figure 4. TBGA64 Connections (Top view through package DQ8 F BYTE 8/ PEN A13 A14 A7 A10 A12 A15 A5 A11 RP DU DQ1 DQ9 DQ3 DQ4 DQ0 DQ10 DQ11 DQ12 DQ2 V DDQ DQ5 ...

Page 9

... KBytes 020000h 01FFFFh 1 Mbit or 128 KBytes 000000h Note: Also see APPENDIX A., Table 23. Total Mbit Blocks for a full listing of the Block Addresses M58LW032D Word (x16) Bus Width 1FFFFFh 1 Mbit or 64 KWords 1F0000h 1EFFFFh 1 Mbit or 64 KWords 1E0000h 01FFFFh 1 Mbit or 64 KWords ...

Page 10

... M58LW032D SIGNAL DESCRIPTIONS See Figure 2., Logic Diagram, 1., Signal Names, for a brief overview of the sig- nals connected to this device. Address Input (A0). The A0 address input is used to select the higher or lower Byte in X8 mode not used in X16 mode (where A1 is the Lowest Significant bit). ...

Page 11

... M58LW032D Supply Voltage. V provides the power DDQ DD or can use a separate supply. DD together to avoid any condition that DDQ is the reference for SS, Ground. V ground is the reference for SSQ . SS decoupled with a 0.1µF ceramic DDQ Circuit. ...

Page 12

... M58LW032D BUS OPERATIONS There are five standard bus operations that control the memory. Each of these is described in this section, see Table 3., Bus Operations, for a sum- mary. On Power-up or after a Hardware Reset the mem- ory defaults to Read Array mode (Page Read). Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations ...

Page 13

... READ MODES Read operations in the M58LW032D are asyn- chronous. The device outputs the data corre- sponding to the address latched, that is the memory array, Status Register, Common Flash In- terface, Electronic Signature or Block Protection Status depending on the command issued. During read operations, if the bus is inactive for a ...

Page 14

... M58LW032D COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. The Commands are summarized in 4., Commands. Refer to Table 4. with the text descriptions below. After power- Reset operation the memory enters Read mode ...

Page 15

... Program or Erase operations from changing the data in it. Two Bus Write cycles are required to is- sue the Block Protect command; the second Bus Write cycle latches the block address and starts M58LW032D Table 9. C., Figure 17., Program Suspend Code, and ...

Page 16

... M58LW032D the Program/Erase Controller. Once the command is issued subsequent Bus Read operations read the Status Register. See the section on the Status Register for details on the definitions of the Status Register bits. During the Block Protect operation the memory will only accept the Read Status Register command. ...

Page 17

... X Table 6., Read Electronic Signature. APPENDIX B., COMMON FLASH INTERFACE - Mode STS Pin V during P/E OL operations Hi-Z when the memory is ready Pulse Low then High when operation (2) completed M58LW032D Subsequent Final Data Op. Addr. Data Op. Addr. Data RD (2) IDD SRD ( Write PA PD Write 01h ...

Page 18

... M58LW032D Table 6. Read Electronic Signature Code Bus Width x8 Manufacturer Code x16 x8 Device Code x16 x8 Block Protection Status x16 Protection Register x8, x16 Note: 1. SBA is the Start Base Address of each block, PRD is Protection Register Data. 2. Base Address, refer to Figure not used in Read Electronic Signature in either x8 or x16 mode. The data is always presented on the lower byte in x16 mode. ...

Page 19

... M58LW032D Min Typ 192 100,000 20 M58LW032D ...

Page 20

... M58LW032D STATUS REGISTER The Status Register provides information on the current or previous Program, Erase, Block Protect or Blocks Unprotect operation. The various bits in the Status Register convey information and errors on the operation. They are output on DQ7-DQ0. To read the Status Register the Read Status Reg- ister command can be issued ...

Page 21

... Low by a Clear Status Register com- mand or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. Reserved (SR0). Bit SR0 of the Status Register is reserved. Its value should be masked. M58LW032D , ...

Page 22

... M58LW032D Table 10. Status Register Bits OPERATION Program/Erase Controller active Write Buffer not ready Write Buffer ready Write Buffer ready in Erase Suspend Program suspended Program suspended in Erase Suspend Program/Block Protect completed successfully Program completed successfully in Erase Suspend Program/Block protect failure due to incorrect ...

Page 23

... Maximum one output short-circuited at a time and for no longer than 1 second. Ta- not implied. Exposure to Absolute Maximum Rat- ing conditions for extended periods may affect de- vice reliability. STMicroelectronics SURE Program and other rel- evant quality documents. Parameter M58LW032D Refer also to Value Unit Min Max –40 125 ° ...

Page 24

... Grade 1 Grade 6 Figure 8. AC Measurement Load Circuit V DDQ V DDQ /2 AI00610 0.1µF Test Condition OUT Conditions summarized M58LW032D Min Max 2.7 3.6 2.7 3 – DDQ 0.5 V DDQ 1.3V 1N914 ...

Page 25

... f=5MHz f=33MHz Program or Erase operation in progress 100µ –100µ M58LW032D Min Max Unit ±1 µA ±5 µ µ µA –0.5 0 0.5 ...

Page 26

... tAXQX tEHQZ tEHQX tGHQZ tGHQX Table 2. M58LW032D 90 110 Min 90 110 IL Max 90 110 IL Min 0 IL Max 1 IL Max 1 IL Min 0 IL Max ...

Page 27

... OUTPUT = Device Enabled (first edge of E0 E2). Refer to IL Test Condition M58LW032D VALID tAXQX tAVQV1 tEHQZ tAXQX1 tEHQX tGHQZ tGHQX OUTPUT Table 2. M58LW032D 90 - 110 Min 6 IL Max 25 IL AI06240 for more Unit ns ns 27/50 ...

Page 28

... INPUT tWHDX tVPHWH tWHBL = Device Enabled (first edge of E0 E2). Refer to IL Test Condition tWHGL AI06241 Table 2. for more M58LW032D Unit 90 - 110 Min 50 ns Min 50 ns Min 0 ns Min 0 ns Min 0 ns Max 500 ns ...

Page 29

... INPUT tEHDX tVPHEH tEHBL = Device Enabled (first edge of E0 E2). Refer to IL Test Condition M58LW032D tEHGL Table 2. M58LW032D 90 - 110 Min 50 IL Min 50 IL Min 0 Min 0 Min 0 IL Max 500 Min 0 IL ...

Page 30

... PLBH t Supply Voltages High to Reset/Power-Down High VDHPH 30/50 tVDHPH Power-Up and Reset = Device Enabled (first edge of E0 E2). Refer to IL Parameter tPHWL tPLBH tPLPH Reset during Program or Erase Table 2. M58LW032D 90 110 Max 130 150 Max 1 1 Min 100 100 Max 30 30 Min 0 ...

Page 31

... M58LW032D inches Typ Min 0.0039 0.0020 0.0394 0.0374 0.0087 0.0067 0.0039 0.7874 0.7795 0.7244 0.7205 0.0197 – ...

Page 32

... M58LW032D Figure 15. TBGA64 - 10x13mm ball array 1mm pitch, Package Outline BALL "A1" A Note: Drawing is not to scale. Table 21. TBGA64 - 10x13mm ball array pitch, Package Mechanical Data Symbol Typ A A1 0.300 A2 0.800 b D 10.000 D1 7.000 ddd e 1.000 E 13 ...

Page 33

... F = Lead-free and RoHS Package, Tape & Reel Packing Note: Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. M58LW032D 110 N 1 M58LW032D T 33/50 ...

Page 34

... M58LW032D APPENDIX A. BLOCK ADDRESS TABLE Table 23. Block Addresses Block Address Range Number (x8 Bus Width) 32 3E0000h-3FFFFFh 31 3C0000h-3DFFFFh 30 3A0000h-3BFFFFh 29 380000h-39FFFFh 28 360000h-37FFFFh 27 340000h-35FFFFh 26 320000h-33FFFFh 25 300000h-31FFFFh 24 2E0000h-2FFFFFh 23 2C0000h-2DFFFFh 22 2A0000h-2BFFFFh 21 280000h-29FFFFh 20 260000h-27FFFFh 19 240000h-25FFFFh 18 220000h-23FFFFh 17 200000h-21FFFFh 16 1E0000h-1FFFFFh 15 1C0000h-1DFFFFh 14 1A0000h-1BFFFFh 13 180000h-19FFFFh 12 160000h-17FFFFh 11 140000h-15FFFFh 10 120000h-13FFFFh 9 100000h-11FFFFh 8 0E0000h-0FFFFFh 7 0C0000h-0DFFFFh 6 0A0000h-0BFFFFh ...

Page 35

... Command Set and Control Interface ID Code 00h 31h Primary algorithm extended Query Address Table: P(h) 00h 00h Alternate Vendor: Command Set and Control Interface ID Code 00h 00h Alternate Algorithm Extended Query address Table 00h , otherwise 00h will be output. IL M58LW032D 28 and 29 show the addresses used to re- Description Description 35/50 ...

Page 36

... M58LW032D Table 26. CFI - Device Voltage and Timing Specification Address (4) x16 x8 001Bh 36h 001Ch 38h 001Dh 3Ah 001Eh 3Ch 001Fh 3Eh 0020h 40h 0021h 42h 0022h 44h 0023h 46h 0024h 48h 0025h 4Ah 0026h 4Ch Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV. ...

Page 37

... OTP protection: No. of Protection Register fields 80h Protection Register’s start address, least significant bits 00h Protection Register’s start address, most significant bits n 03h n where 2 is number of factory reprogrammed bytes n 03h n where 2 is number of user programmable bytes M58LW032D Selected Block Information (3) (3) Description 37/50 ...

Page 38

... M58LW032D Address (2) offset x16 x8 (P+13)h 0044h 88h (P+14)h 0045h 8Ah (P+15)h 0046h 8Ch Note: 1. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in mV mode, A0 must be set to V 38/50 Data (Hex) 03h Page Read: 2 00h Synchronous mode configuration fields Reserved for future use , otherwise 00h will be output ...

Page 39

... Write N , Block Address Write Buffer Data, Start Address YES Write Next Buffer Data, (2) Next Program Address Program Buffer to Flash Confirm D0h Read Status Register NO SR7 = 1 YES Full Status (3) Register Check End M58LW032D NO YES Timeout Try Again Later AI05511 39/50 ...

Page 40

... M58LW032D Figure 17. Program Suspend & Resume Flowchart and Pseudo Code Start Write B0h Write 70h Read Status Register YES YES Write FFh Read data from another block Write D0h Program Continues 40/ Program Complete Write FFh Read Data Program/Erase Suspend Command: – ...

Page 41

... Error (1) NO Command Sequence Error NO Erase Error (1) NO Erase to Protected Block Error M58LW032D Erase command: – write 20h – write D0h to Block Address (A12-A17) (memory enters read Status Register after the Erase command) do: – read status register – if Program/Erase Suspend command ...

Page 42

... M58LW032D Figure 19. Erase Suspend & Resume Flowchart and Pseudo Code Start Write B0h Write 70h Read Status Register YES YES Write FFh Read data from another block or Program Write D0h Erase Continues 42/ Erase Complete Write FFh Read Data Program/Erase Suspend Command: – ...

Page 43

... NO V PEN Invalid Error YES Invalid Command Sequence Error YES Block Protect Error M58LW032D Block Protect Command – write 60h, Block Adress – write 01h, Block Adress do: – read status register while SR7 = 1 If SR3 = 1, V PEN Invalid Error If SR4 = 1, SR5 = 1 Invalid Command Sequence ...

Page 44

... M58LW032D Figure 21. Block Unprotect Flowchart and Pseudo Code Start Write 60h Write D0h Read Status Register SR7 = 1 YES SR3 = 1 NO SR4, SR5 = 1,1 NO SR5 = 1 NO Write FFh Blocks Unprotect Sucessful 44/50 NO YES V PEN Invalid Error YES Invalid Command Sequence Error YES Blocks Unprotect ...

Page 45

... YES V PEN Invalid Error YES Protection Register Program Error YES Protection Register Program Error M58LW032D Protection Register Program Command – write C0h – write Protection Register Address, Protection Register Data do: – read status register while SR7 = 1 If SR3 = 1, SR4 = 1 V PEN Invalid Error ...

Page 46

... M58LW032D Figure 23. Command Interface and Program Erase Controller Flowchart (a) WAIT FOR COMMAND WRITE NO 90h YES READ 98h SIGNATURE YES CFI QUERY B Note 1. The Erase command (20h) can only be issued if the flash is not already in Erase Suspend. 46/ 70h YES READ NO 50h STATUS ...

Page 47

... YES ERASE SUSPENDED YES YES 70h NO YES 90h NO YES 98h NO YES E8h NO YES READ D0h STATUS NO READ ARRAY M58LW032D A ERASE (READ STATUS) Program/Erase Controller YES READY Status bit in the Status Register ? NO NO B0h YES READ STATUS ERASE SUSPEND READY ? NO READ STATUS ...

Page 48

... M58LW032D Figure 25. Command Interface and Program Erase Controller Flowchart (c). WAIT FOR COMMAND WRITE READ STATUS READ SIGNATURE CFI QUERY READ ARRAY 48/50 B YES READ STATUS READ ARRAY YES NO FFh NO YES PROGRAM SUSPENDED YES YES 70h NO YES 90h NO YES 98h NO NO YES READ ...

Page 49

... Absolute Maximum Ratings table. I OSC and V parameters added to DC Characteristics table. t DDO PENH and t minimum values modified in EHDX and note 1 added to LEAD and Table 21.) Document moved to new template. M58LW032D modified in Table 17. DDQ removed from note 1 below DDQ Table 9. 19 and 22 modified accordingly and V ...

Page 50

... M58LW032D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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