lh28f320bfhe-pbtlez Sharp Microelectronics of the Americas, lh28f320bfhe-pbtlez Datasheet - Page 12

• Manufacturer Part Number: lh28f320bfhe-pbtlez
• Description: Flash Memory 32mbit 2mbitx16
• Manufacturer: Sharp Microelectronics of the Americas

NOTES:
1. See DC Characteristics for V
2. X can be V
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, (page buffer) program or OTP program are reliably
5. Refer to Table 6 for valid D
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LH28F320BF series for more information about query code.
8. RY/BY# is V
Read Array
Output Disable
Standby
Reset
Read Identifier
Codes/OTP
Read Query
Write
executed when V
(page buffer) program or OTP program algorithms. It is High Z during when the WSM is not busy, in
block erase suspend mode (with program and page buffer program inactive), (page buffer) program suspend
mode, or reset mode.
Mode
IL
OL
or V
Notes
4,5,6
when the WSM (Write State Machine) is executing internal block erase, full chip erase,
6,7
CC
6
3
6
IH
=2.7V-3.6V.
.
RST#
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IL
IN
IL
during a write operation.
or V
Table 5. Bus Operation
CE#
V
V
V
V
V
V
IH
X
IH
IL
IL
IL
IL
IL
voltages.
OE#
V
V
V
V
V
X
X
IL
IH
IL
IL
IH
LHF32FEZ
WE#
V
V
V
V
V
X
X
IH
IH
IH
IH
IL
(1, 2)
Table 3 and
Appendix
Address
Table 4
See
See
X
X
X
X
X
Table 3 and
Appendix
Table 4
DQ
High Z
High Z
High Z
D
D
See
See
OUT
IN
0-15
RY/BY#
High Z
X
X
X
X
X
X
(8)
Rev. 2.44
9