lh28f320bfhe-pbtlez Sharp Microelectronics of the Americas, lh28f320bfhe-pbtlez Datasheet - Page 28

• Manufacturer Part Number: lh28f320bfhe-pbtlez
• Description: Flash Memory 32mbit 2mbitx16
• Manufacturer: Sharp Microelectronics of the Americas

1.2.5 AC Characteristics - Write Operations
NOTES:
1. The timing characteristics for reading the status register during block erase, full chip erase, (page buffer) program and
2. A write operation can be initiated and terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (t
5. Write pulse width high (t
6. t
7. Refer to Table 6 for valid address and data for block erase, full chip erase, (page buffer) program, OTP program or lock
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
DVWH
AVWH
WHEH
WHDX
WHAX
WHWL
SHWH
WHGL
QVSL
WHR0
WHRL
OTP program operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
CE# or WE# (whichever goes high first). Hence, t
edge of CE# or WE# (whichever goes low last). Hence, t
bit configuration.
WHR0
Symbol
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
WLEL
PHEL
EHR0
(t
AVEH
EHWH
SHEH
EHGL
EHRL
ELEH
DVEH
EHDX
EHAX
EHEL
EHR0
)
)
)
)
)
)
)
)
)
)
)
)
)
) after the Read Query or Read Identifier Codes/OTP command=t
Write Cycle Time
RST# High Recovery to WE# (CE#) Going Low
CE# (WE#) Setup to WE# (CE#) Going Low
WE# (CE#) Pulse Width
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
WE# (CE#) Pulse Width High
WP#/ACC High Setup to WE# (CE#)
Going High
Write Recovery before Read
WP#/ACC High Hold from Valid SRD, RY/BY# High Z
WE# (CE#) High to SR.7 Going "0"
WE# (CE#) High to RY/BY# Going Low
WP
) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of
WPH
) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling
V
CC
=2.7V-3.6V, T
Parameter
WP
(1), (2)
LHF32FEZ
=t
WLWH
WPH
A
=-40°C to +85°C
=t
=t
WP#/ACC=V
WP#/ACC=V
WHWL
ELEH
=t
=t
WLEH
EHEL
=t
ACCH
IH
=t
ELWH
WHEL
AVQV
.
+100ns.
=t
Notes
3, 6
EHWL
3
4
7
7
5
3
3
3
.
Min.
150
200
60
45
40
45
15
30
0
0
0
0
0
0
t
Max.
AVQV
+50
100
Rev. 2.44
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
25