lh28f320bfhe-pbtlez Sharp Microelectronics of the Americas, lh28f320bfhe-pbtlez Datasheet - Page 31

• Manufacturer Part Number: lh28f320bfhe-pbtlez
• Description: Flash Memory 32mbit 2mbitx16
• Manufacturer: Sharp Microelectronics of the Americas

1.2.7 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance
NOTES:
1. Typical values measured at V
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1" or RY/BY#
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WPB
WMB
WHQV1
EHQV1
WHOV1
EHOV1
WHQV2
EHQV2
WHQV3
EHQV3
WHRH1
EHRH1
WHRH2
EHRH2
ERES
Symbol
are not set. Subject to change based on device characterization.
going High Z.
than t
ERES
/
/
/
/
/
/
4K-Word Parameter Block
Program Time
32K-Word Main Block
Program Time
Word Program Time
OTP Program Time
4K-Word Parameter Block
Erase Time
32K-Word Main Block
Erase Time
Full Chip Erase Time
(Page Buffer) Program Suspend
Latency Time to Read
Block Erase Suspend
Latency Time to Read
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
and its sequence is repeated, the block erase operation may not be finished.
Parameter
CC
=3.0V, WP#/ACC=3.0V or 12V, and T
V
CC
=2.7V-3.6V, T
Notes
2
2
2
2
2
2
2
2
2
2
4
4
5
Command is
Page Buffer
LHF32FEZ
Used or not
Not Used
Not Used
Not Used
Not Used
Used
Used
Used
Used
-
-
-
-
-
A
=-40°C to +85°C
WP#/ACC=V
Min. Typ.
500
A
=+25°C. Assumes corresponding lock bits
(In System)
0.05
0.03
0.38
0.24
0.3
0.6
36
40
11
7
5
5
(1)
IL
Max.
or V
0.12
200
100
400
350
0.3
2.4
1.0
10
20
4
5
IH
(2)
Min. Typ.
500
WP#/ACC=V
(In Manufacturing)
0.04
0.02
0.31
0.17
0.2
0.5
27
33
9
5
5
5
(1)
ACCH
Max.
(3)
0.12
0.06
185
185
350
1.0
0.5
90
10
20
Rev. 2.44
4
5
(2)
Unit
28
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s
s