m29dw640d70za6t STMicroelectronics, m29dw640d70za6t Datasheet
m29dw640d70za6t
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m29dw640d70za6t Summary of contents
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... ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program MEMORY BLOCKS – Dual Bank Memory Array: 8Mbit+24Mbit – Parameter Blocks (Top or Bottom Location) DUAL OPERATIONS – Read in one bank while Program or Erase in other ERASE SUSPEND and RESUME MODES – ...
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M29DW323DT, M29DW323DB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Table 27. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Table 28. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Table 29. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Table 30. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 APPENDIX C.EXTENDED MEMORY BLOCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Customer Lockable Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Table 31. Extended Block Address and Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 APPENDIX D.BLOCK PROTECTION Programmer Technique ...
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... Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special op- erations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identi- fied ...
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M29DW323DT, M29DW323DB Figure 3. TSOP Connections V PP /WP 6/50 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29DW323DT A20 M29DW323DB A18 A17 ...
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Figure 4. TFBGA48 Connections (Top view through package Table 2. Bank Architecture Bank Bank Size A 8 Mbit B 24 Mbit ...
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M29DW323DT, M29DW323DB Figure 5. Block Addresses (x8) Top Boot Block (x8) Address lines A20-A0, DQ15A-1 000000h 64 KByte or 32 KWord 00FFFFh Bank B 2F0000h 64 KByte or 32 KWord 2FFFFFh 300000h 64 KByte or 32 KWord 30FFFFh 3E0000h 64 ...
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Figure 6. Block Addresses (x16) Top Boot Block (x16) Address lines A20-A0 000000h 64 KByte or 32 KWord 007FFFh Bank B 178000h 64 KByte or 32 KWord 17FFFFh 180000h 64 KByte or 32 KWord 187FFFh 1F0000h 64 KByte or 32 ...
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... Unlock Bypass Program, I Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. Note that if V most boot blocks will remain protected even ...
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... Byte/Word Organization Select (BYTE). The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus modes of the memory. When Byte/Word Organization Select is Low the memory mode, when High the memory is in x16 mode Supply Voltage (2 ...
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... They require V Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Tables Block Protect and Chip Unprotect. Groups blocks can be protected against accidental Pro- gram or Erase ...
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... V V Bus Read IL Bus Write Output Disable X Standby V IH Read Manufacturer Code V V Read Device Code IL Extended Memory Block Verify Code Note Address Inputs G W DQ15A–1, A0-A20 V Cell Address Command Address IH IL ...
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... Common Flash Interface (CFI) memory area. Program Command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write oper- ations, the final write operation latches the ad- dress and data, and starts the Program/Erase Controller ...
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... Unlock Bypass Reset command to return the bank to Read mode. In Unlock Bypass mode the memory can be read Read mode. When V the memory automatically enters the Unlock By- pass mode and the Unlock Bypass Program com- Table mand can be issued immediately ...
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... Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspend- ed. If the Erase Suspend command is issued dur- ing the period when the memory is waiting for an additional block (before the Program/Erase Con- troller starts) then the Erase is suspended immedi- ately and will start immediately when the Erase Resume Command is issued ...
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Erase Resume Command The Erase Resume command must be used to re- start the Program/Erase Controller after an Erase Suspend. The device must be in Read Array mode before the Resume command will be accepted. An erase can be suspended ...
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M29DW323DT, M29DW323DB Table 6. Commands, 8-bit mode, BYTE = V Command Add 1 Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Quadruple Byte Program 5 AAA Unlock Bypass 3 AAA Unlock Bypass Program 2 Unlock Bypass Reset 2 ...
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... One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase com- mand ...
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M29DW323DT, M29DW323DB Table 8. Status Register Bits Operation Address Program Bank Address Program During Erase Bank Address Suspend Program Error Bank Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block ...
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... Architecture M29DW323DT and M29DW323DB gives greater flexibility for software developers to split the code and data spaces within the memory array. The Dual Operations feature simplifies the software management of the device by allowing code to be executed from one bank while the other bank is being programmed or erased ...
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... PP 22/50 these or any other conditions above those indicat the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality docu- ments. Parameter (2,3) +2V during transition and for less than 20ns during transitions. ...
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DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the ...
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M29DW323DT, M29DW323DB Table 14. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (2) Supply Current (Read) I CC1 I Supply Current (Standby) CC2 Supply Current (Program/ (1,2) I CC3 Erase) V Input Low Voltage ...
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Figure 11. Read Mode AC Waveforms A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 15. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...
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M29DW323DT, M29DW323DB Figure 12. Write AC Waveforms, Write Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 16. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...
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Figure 13. Write AC Waveforms, Chip Enable Controlled A0-A20/ A–1 W tWLEL G E DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 17. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC ...
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M29DW323DT, M29DW323DB Figure 14. Toggle and Alternative Toggle Bits Mechanism, Chip Enable Controlled Address Outside the Bank A0-A20 Being Programmed or Erased E G Data (1) (2) DQ2 /DQ6 Read Operation outside the Bank Being Programmed or Erased Note: 1. ...
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Figure 16. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 19. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH Output Enable ...
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M29DW323DT, M29DW323DB PACKAGE MECHANICAL Figure 18. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline DIE Note: Drawing not to scale. Table 20. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package ...
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Figure 19. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline FD FE BALL "A1" Note: Drawing not to scale. Table 21. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data Symbol Typ ...
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... Note: This product is also available with the Extended Block factory locked. For further details and ordering information contact your nearest ST sales office. Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you ...
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APPENDIX A. BLOCK ADDRESSES Table 23. Top Boot Block Addresses, M29DW323DT (Kbytes/ Block Kwords) 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 ...
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M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 64/32 46 64/32 47 64/32 48 64/32 49 ...
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Block Kwords) 63 8/4 64 8/4 65 8/4 66 8/4 67 8/4 68 8/4 69 8/4 70 8/4 Note: 1. Used as the Extended Block Addresses in Extended Block mode. Protection Block (x8) Group Protection Group 3F0000h–3F1FFFh Protection Group ...
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M29DW323DT, M29DW323DB Table 24. Bottom Boot Block Addresses, M29DW323DB (Kbytes/ Block Kwords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 ...
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Protection Block Block Kwords) Group 31 64/32 32 64/32 Protection Group 33 64/32 34 64/32 35 64/32 36 64/32 Protection Group 37 64/32 38 64/32 39 64/32 40 64/32 Protection Group 41 64/32 42 64/32 43 64/32 44 64/32 ...
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M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 Note: 1. Used as the Extended Block Addresses in Extended Block mode. 38/50 Protection Block (x8) Group 380000h-38FFFFh 390000h-39FFFFh ...
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... Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’. is read from the memory. Tables 25, 26, 27, 28, and 30 data. The CFI data structure also contains a security area where a 64 bit unique security number is writ- ...
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M29DW323DT, M29DW323DB Table 27. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h ...
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Table 29. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h 92h ...
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... Bit DQ7 is the most significant bit in the Extended Block Verify Code and a specific procedure must be followed to read it. See “Extended Memory Block Verify Code Tables 3 ” in tions, BYTE = V ...
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... Reset/Blocks Temporary Unprotect pin, RP the maximum ratings of the components on the mi- croprocessor bus, therefore this technique is suit- able for use after the memory has been fitted to the system. To protect a group of blocks follow the flowchart in Figure 22., In-System Equipment Group Protect ) volt- Flowchart ...
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M29DW323DT, M29DW323DB Figure 20. Programmer Equipment Group Protect Flowchart Note: Block Protection Groups are shown in 44/50 START ADDRESS = GROUP ADDRESS Wait ...
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Figure 21. Programmer Equipment Chip Unprotect Flowchart NO = 1000 Note: Block Protection Groups are shown in START PROTECT ALL GROUPS CURRENT GROUP = 0 A6, A12, A15 ...
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M29DW323DT, M29DW323DB Figure 22. In-System Equipment Group Protect Flowchart Note: 1. Block Protection Groups are shown can be either 46/50 START WRITE 60h ADDRESS ...
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Figure 23. In-System Equipment Chip Unprotect Flowchart NO = 1000 ISSUE READ/RESET COMMAND Note: Block Protection Groups are shown in START PROTECT ALL GROUPS CURRENT GROUP = WRITE ...
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... Table 14., DC parameters and notes added to 08-Apr-2003 6.1 Endurance APPENDIX C., EXTENDED MEMORY read the Extended Memory Block. Extended Memory Block Verify Code row added to Tables Address modified in Status Register 22., Ordering Information Table 20., TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical 07-May-2003 6 ...
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... Version V minimum value updated and I PP Architecture option updated in Block Protect/Unprotect code updated in 19-Dec-2003 7.4 Customer Lockable Extended Block mechanism modified in Memory Block. APPENDIX section and Note 2 added below Flowchart. 23-Mar-2004 8.0 Introduction of the 12-July-2004 9.0 90ns speed class removed from datasheet. 12-Aug-2004 10.0 ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...