mc9s08se4 Freescale Semiconductor, Inc, mc9s08se4 Datasheet - Page 26

• Manufacturer Part Number: mc9s08se4
• Description: 8-bit Hcs08 Central Processor Unit
• Manufacturer: Freescale Semiconductor, Inc

Ordering Information
3.11
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section in the reference
manual.
4
This chapter contains ordering information for the device numbering system.
Example of the device numbering system:
26
1
2
3
4
Num
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25 °C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
The frequency of this clock is controlled by a software setting.
1
2
3
5
6
7
8
9
4
Flash Specifications
Ordering Information
C
D
D
D
D
C
C
P
P
P
P
(MC = Fully Qualified)
(9 = Flash-based)
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25 °C
L
to T
Memory
H
Status
Family
= –40 °C to 125 °C
Core
Characteristic
4
2
2
MC
MC9S08SE8 Series MCU Data Sheet, Rev. 2
1
9 S08 SE
3
Table 15. Flash Characteristics
2
2
8
C
V
Symbol
XX
prog/erase
V
n
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
prog
FLPE
Read
E
Temperature range
Package designator (see
RoHS compliance indicator (E = yes)
Memory Size (in KB)
10,000
Min
150
2.7
2.7
15
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
(C = –40 °C to 85 °C)
(V = –40 °C to 105 °C)
(M = –40 °C to 125 °C)
9
4
Table
Freescale Semiconductor
16)
Max
6.67
200
5.5
5.5
—
—
DD
cycles
years
supply.
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V