km416c4000b Samsung Semiconductor, Inc., km416c4000b Datasheet
km416c4000b
Related parts for km416c4000b
km416c4000b Summary of contents
Page 1
... CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabri- cated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - KM416C4000B(5.0V, 8K Ref.) - KM416C4100B(5.0V, 4K Ref.) • Active Power Dissipation Speed ...
Page 2
... KM416C4000B, KM416C4100B PIN CONFIGURATION (Top Views) • KM416C40(1)00BS DQ0 DQ15 3 48 DQ1 DQ14 4 47 DQ2 DQ13 5 46 DQ3 DQ12 DQ4 DQ11 8 43 DQ5 DQ10 9 42 DQ6 DQ9 10 41 DQ7 DQ8 11 40 N.C N ...
Page 3
... KM416C4000B, KM416C4100B ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...
Page 4
... KM416C4000B, KM416C4100B DC AND OPERATING CHARACTERISTICS Symbol Power Speed -45 I Don t care CC1 I Normal Don t care CC2 -45 I Don t care CC3 -45 I Don t care CC4 I Normal Don t care CC5 -45 I Don t care CC6 Operating Current (RAS and UCAS, LCAS, Address cycling @ CC1 ...
Page 5
... KM416C4000B, KM416C4100B CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition : V =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V CC Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS ...
Page 6
... KM416C4000B, KM416C4100B AC CHARACTERISTICS (Continued) Parameter Refresh period (4K, Normal) Refresh period (8K, Normal) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge W delay time CAS set-up time (CAS -before-RAS refresh) CAS hold time (CAS -before-RAS refresh) ...
Page 7
... KM416C4000B, KM416C4100B TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time Column Address to RAS lead time ...
Page 8
... KM416C4000B, KM416C4100B NOTES initial pause of 200 is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between (min) and V (max) and are assumed to be 5ns for all inputs ...
Page 9
... KM416C4000B, KM416C4100B are referenced to the earlier CAS falling edge. 13. ASC CAH 14 specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle 15. is referenced to the later CAS falling edge at word read-modify-write cycle. ...
Page 10
... KM416C4000B, KM416C4100B WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t t RCD RSH t CAS ...
Page 11
... KM416C4000B, KM416C4100B LOWER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t t RCD ...
Page 12
... KM416C4000B, KM416C4100B UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t t RCD ...
Page 13
... KM416C4000B, KM416C4100B WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
Page 14
... KM416C4000B, KM416C4100B LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 15
... KM416C4000B, KM416C4100B UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 16
... KM416C4000B, KM416C4100B WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
Page 17
... KM416C4000B, KM416C4100B LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
Page 18
... KM416C4000B, KM416C4100B UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
Page 19
... KM416C4000B, KM416C4100B WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH t t RCD ...
Page 20
... KM416C4000B, KM416C4100B LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH t CAS t RAD ...
Page 21
... KM416C4000B, KM416C4100B UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH t RAD t CSH ...
Page 22
... KM416C4000B, KM416C4100B FAST PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 RASP ¡ ...
Page 23
... KM416C4000B, KM416C4100B FAST PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 24
... KM416C4000B, KM416C4100B FAST PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 25
... KM416C4000B, KM416C4100B FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 26
... KM416C4000B, KM416C4100B FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
Page 27
... KM416C4000B, KM416C4100B FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
Page 28
... KM416C4000B, KM416C4100B FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE RAS CRP t RCD UCAS CRP t RCD LCAS RAD t RAH t ASR t ASC ROW A ADDR RCS DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
Page 29
... KM416C4000B, KM416C4100B FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP t RCD LCAS RAD t RAH t ASR t ASC ROW A ADDR RCS DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
Page 30
... KM416C4000B, KM416C4100B FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP LCAS RAD t RAH t ASR t ASC ROW A ADDR RCS DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
Page 31
... KM416C4000B, KM416C4100B RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : Don t care ...
Page 32
... KM416C4000B, KM416C4100B HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD RSH t t RCD ...
Page 33
... KM416C4000B, KM416C4100B HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD ...
Page 34
... KM416C4000B, KM416C4100B CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS RPC UCAS LCAS DQ0 ~ DQ7 OFF DQ8 ~ DQ15 TEST MODE IN CYCLE NOTE : Don t care ...
Page 35
... KM416C4000B, KM416C4100B PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(II) 50 TSOP(II) 400mil 0.841 (21.35) 0.821 (20.85) 0.829 (21.05) 0.034 (0.875) MAX 0.047 (1.20) MAX 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.004 (0.10) 0.010 (0.25) 0.010 (0.25) TYP O 0~8 0.018 (0.45) 0.030 (0.75) ...