km416c4000b Samsung Semiconductor, Inc., km416c4000b Datasheet - Page 6

• Manufacturer Part Number: km416c4000b
• Description: 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: Samsung Semiconductor, Inc.

KM416C4000B, KM416C4100B
AC CHARACTERISTICS
Refresh period (4K, Normal)
Refresh period (8K, Normal)
Write command set-up time
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Fast Page mode cycle time
Fast Page mode read-modify-write cycle time
CAS precharge time (Fast Page cycle)
RAS pulse width (Fast Page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
Parameter
(Continued)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
REF
REF
WCS
CWD
RWD
AWD
CPWD
CSR
CHR
RPC
CPA
PC
PRWC
CP
RASP
RHCP
OEA
OED
OEZ
OEH
WTS
WTH
WRP
WRH
RASS
RPS
CHS
Min
100
-50
32
67
43
48
10
31
70
45
28
12
12
10
15
10
10
80
0
5
5
9
0
-45
200K
Max
64
64
26
12
13
Min
100
-50
36
73
48
53
10
35
76
10
50
30
13
13
10
15
10
10
90
0
5
5
0
-5
200K
Max
64
64
30
13
13
Min
100
110
-50
38
83
53
60
10
40
85
10
60
35
13
15
10
15
10
10
0
5
5
0
-6
200K
Max
CMOS DRAM
64
64
35
15
13
Units
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
20,21,22
20,21,22
20,21,22
Note
7,15
17
18
14
11
11
7
7
7
3
6