km416c4000b Samsung Semiconductor, Inc., km416c4000b Datasheet - Page 4

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km416c4000b

Manufacturer Part Number
km416c4000b
Description
4m X 16bit Cmos Dynamic Ram With Fast Page Mode
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
KM416C4000B, KM416C4100B
DC AND OPERATING CHARACTERISTICS
I
I
I
I
I
I
*Note :
CC1
CC2
CC3
CC4
CC5
CC6
Symbol
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
* : RAS-only Refresh Current (UCAS=LCAS=V
* : Fast Page Mode Current (RAS=V
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
: Standby Current (RAS=UCAS=LCAS=W=V
: Standby Current (RAS=UCAS=LCAS=W=V
I
I
I
I
I
I
CC1
CC2
CC3
CC4
CC5
CC6
I
I
address can be changed maximum once within one fast page mode cycle time,
CC1
CC
is specified as an average current. In I
, I
CC3
, I
Don t care
Don t care
Don t care
Don t care
CC4
Normal
Normal
Power
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
Don t care
Don t care
Speed
-45
-45
-45
-45
-5
-6
-5
-6
-5
-6
-5
-6
IL
, UCAS or LCAS, Address cycling @
IH
CC
IH
CC1
)
, RAS, Address cycling @
-0.2V)
, I
CC3
KM416C4000B
and I
(Continued)
100
100
100
90
80
90
80
70
60
50
90
80
2
1
CC6,
t
RC
address can be changed maximum once while RAS=V
=min.)
t
t
t
RC
RC
PC
=min)
Max
=min.)
=min.)
t
PC
.
KM416C4100B
130
120
110
130
120
110
130
120
110
80
70
60
2
1
CMOS DRAM
Units
IL
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
. In I
CC4
,

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