km416c4000b Samsung Semiconductor, Inc., km416c4000b Datasheet - Page 3

• Manufacturer Part Number: km416c4000b
• Description: 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: Samsung Semiconductor, Inc.

KM416C4000B, KM416C4100B
RECOMMENDED OPERATING CONDITIONS
*1 : V
*2 : -2.0 at pulse width 20ns which is measured at V
DC AND OPERATING CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current (Any input 0 V
all other pins not under test=0 Volt)
Output Leakage Current
(Data out is disabled, 0V V
Output High Voltage Level(I
Output Low Voltage Level(I
Voltage on any pin relative to V
Voltage on V
Storage Temperature
Power Dissipation
Short Circuit Output Current
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
CC
+2.0V at pulse width 20ns which is measured at V
Parameter
CC
supply relative to V
Parameter
Parameter
OL
OUT
OH
=4.2mA)
=-5mA)
Symbol
SS
V
V
V
V
V
CC
CC
SS
IH
IL
SS
)
IN
V
CC
+0.5V,
SS
I
OS
Min
-1.0
4.5
2.4
V
Symbol
0
IN,
Address
Tstg
V
CC
P
*2
V
CC
D
Symbol
(Recommended operating conditions unless otherwise noted.)
OUT
I
V
V
I
O(L)
(Voltage referenced to Vss, T
I(L)
OH
OL
Typ
5.0
0
-
-
Min
2.4
-5
-5
-
-1.0 to +7.0
-1.0 to +7.0
-55 to +150
Rating
50
1
A
= 0 to 70 C)
V
CC
Max
5.5
0.8
+1.0
Max
0
0.4
5
5
-
CMOS DRAM
*1
Units
Units
Units
mA
uA
uA
W
V
V
V
V
V
V
V
V
C