bsc106n025s Infineon Technologies Corporation, bsc106n025s Datasheet

bsc106n025s

Manufacturer Part Number

bsc106n025s

Description

N-channel Mosfet 20v?300v Power Transistor Power Mosfet

Manufacturer

Infineon Technologies Corporation

Datasheet

1.BSC106N025S.pdf (10 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

bsc106n025sG

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Current page: 1 of 10
Download datasheet (379Kb)

Rev. 1.1

Features

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC

• Logic level / N-channel

• Excellent gate charge x R

• Very low on-resistance R

• Superior thermal resistance

• Avalanche rated

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Reverse diode dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

OptiMOS

Type

BSC106N025S G

2 Power-Transistor

Package

PG-TDSON-8

=25 °C, unless otherwise specified

DS(on)

for target applications

product (FOM)

Symbol Conditions

dv /dt

D,pulse

tot

, T

Marking

106N025S

stg

di /dt =200 A/µs,

page 1

j,max

thJA

=30 A, R

=30 A, V

thJA

=25 °C,

=25 °C

=100 °C

=25 °C

=45 K/W

=150 °C

=24 V,

=25 Ω

Product Summary

DS(on),max

-55 ... 150

55/150/56

Value

120

±20

2.8

PG-TDSON-8

BSC106N025S G

10.6

Unit

kV/µs

°C

mΩ

2008-04-25

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