bsc119n03sg Infineon Technologies Corporation, bsc119n03sg Datasheet
bsc119n03sg
Available stocks
Related parts for bsc119n03sg
bsc119n03sg Summary of contents
Page 1
OptiMOS ® 2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC • N-channel • Logic level • Excellent gate charge x R DS(on) • Very low on-resistance R ...
Page 2
Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
Page 4
Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter 1000 limited by ...
Page 5
Typ. output characteristics I =f =25 ° parameter 4 Typ. transfer characteristics I =f ...
Page 6
Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...
Page 7
Avalanche characteristics =25 Ω parameter: T j(start) 100 125 ° Drain-source breakdown voltage V =f BR(DSS ...
Page 8
Package Outline PG-TDSON-8: Outline Rev. 1.7 PG-TDSON-8 page 8 BSC119N03S G 2008-04-28 ...
Page 9
Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.7 page 9 BSC119N03S G 2008-04-28 ...
Page 10
Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...