bsc110n06ns3g Infineon Technologies Corporation, bsc110n06ns3g Datasheet
bsc110n06ns3g
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bsc110n06ns3g Summary of contents
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Type OptiMOS TM 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • Superior thermal resistance • N-channel, normal level • 100% avalanche tested ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by ...
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Typ. output characteristics I =f =25 ° parameter 200 10 V 150 100 Typ. transfer characteristics I =f |>2 ...
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Drain-source on-state resistance =10 V DS(on max -60 - Typ. capacitances C =f ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 100 °C 125 ° 0.1 0 Drain-source breakdown voltage V =f BR(DSS ...
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PG-TDSON-8 (SuperSO8) Rev.2.1 page 8 BSC110N06NS3 G 2009-02-02 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...