bsc196n10nsg Infineon Technologies Corporation, bsc196n10nsg Datasheet

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OptiMOS ® 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...

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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 2) ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...

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Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter ...

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Typ. output characteristics I =f =25 ° parameter 5 4 Typ. transfer ...

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Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f MHz ...

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Avalanche characteristics =25 Ω parameter: T j(start) 100 100 °C 10 125 ° Drain-source breakdown voltage V =f BR(DSS 110 105 ...

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Package Outline: PG-TDSON-8 Rev. 1.04 page 8 BSC196N10NS G 2008-05-08 ...

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Dimensions in mm Rev. 1.04 page 9 BSC196N10NS G 2008-05-08 ...

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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...